A Laser Diode Driver with Hyperbolic Time Dependent Current in 0.35µm BiCMOS Technology

2015 ◽  
Author(s):  
Abbas Khanmohammadi ◽  
Niksa Tadic ◽  
Horst Zimmermann
Keyword(s):  
Laser Diode ◽  
Time Dependent ◽  
Bicmos Technology

scholarly journals Simulation of Bistable Laser Diodes with lnhomogeneous Excitation

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 283-287
Author(s):  
Gang Fang ◽  
Ting-Wei Tang
Keyword(s):  
Laser Diode ◽  
Computer Model ◽  
Optical Switching ◽  
Laser Diodes ◽  
Input Pulse ◽  
Time Dependent ◽  
Fabry Perot ◽  
Reset Operation ◽  
Cavity Laser

A comprehensive time-dependent 1-D computer model is developed for the simulation of multi-section bistable laser diodes. Analysis of a Fabry-Perot (FP) cavity laser diode indicates that the height and shape of the optical input pulse as well as the wavelength play important roles in the set/reset operation of optical switching.

Characterization of 0.5 µm BiCMOS Gate Oxide Using Time Dependent Dielectric Breakdown Test

2010 ◽  
Vol 97-101 ◽  
pp. 40-44
Author(s):  
Mohd Zahrin A. Wahab ◽  
Azman Jalar ◽  
Shahrum Abdullah ◽  
Hazian Mamat
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Raw Material ◽  
Time Dependent ◽  
Process Equipment ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Bicmos Technology ◽  
Set Up

This paper presents Time Dependent Dielectric Breakdown (TDDB) testing of gate oxide on 0.5µm BiCMOS Technology. The gate oxide quality for the technology has been investigated and furthermore to qualify the whole set up of the foundry from the process, equipment, cleanroom control and raw material used to produce high quality gate oxide and hence good quality of BiCMOS devices. TDDB test is the most widely used testing to check the quality of gate oxide and in this paper the TDDB test done on MOS capacitors fabricated using 0.5 µm BiCMOS Technology. Seven consecutive qualification lots have been tested and the data shown that TDDB measurement is capable to differentiate between accepted wafer and rejected wafer. The data also shown that TDDB test was capable to characterise 0.5 µm BiCMOS gate oxide with higher yield and comparable with reference lot from other foundry fab.

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