Application of multi-domain and multi-language cosimulation to an optical MEM switch design

On Number of Planes of Rearrangeably Nonblocking Optical Banyan Networks with Link Failures

Journal of Scientific Research ◽

10.3329/jsr.v1i1.1070 ◽

2008 ◽

Vol 1 (1) ◽

pp. 43-54

Author(s):

Basra Sultana ◽

Mamun-ur-Rashid Khandker

Keyword(s):

Optical Switching ◽

Blocking Probability ◽

Link Failure ◽

Link Failures ◽

Small Depth ◽

Internal Link ◽

Banyan Network ◽

Minimum Number ◽

Switch Design ◽

Banyan Networks

Vertically stacked optical banyan (VSOB) networks are attractive for serving as optical switching systems due to the desirable properties (such as the small depth and self-routing capability) of banyan network structures. Although banyan-type networks result in severe blocking and crosstalk, both these problems can be minimized by using sufficient number of banyan planes in the VSOB network structure. The number of banyan planes is minimum for rearrangeably nonblocking and maximum for strictly nonblocking structure. Both results are available for VSOB networks when there exist no internal link-failures. Since the issue of link-failure is unavoidable, we intend to find the minimum number of planes required to make a VSOB network nonblocking when some links are broken or failed in the structure. This paper presents the approximate number of planes required to make a VSOB networks rearrangeably nonblocking allowing link-failures. We also show an interesting behavior of theÂ blockingÂ probability of a faulty VSOB networks that the blocking probability may notÂ alwaysÂ increase monotonously withÂ theÂ increaseÂ ofÂ link-failures; blocking probabilityÂ decreasesÂ forÂ certain range ofÂ link-failures, and then increases again. We believe that such fluctuating behavior of blocking probability with the increase of link failure probability deserves special attention in switch design. Â Keywords: Banyan networks; Blocking probability; Switching networks; Vertical stacking; Link-failures.Â Â© 2009 JSR Publications. ISSN: 2070-0237(Print); 2070-0245 (Online). All rights reserved.Â DOI: 10.3329/jsr.v1i1.1070

Download Full-text

Switch design based on magnetic hyperbolic metamaterials

Optics Communications ◽

10.1016/j.optcom.2021.126788 ◽

2021 ◽

Vol 486 ◽

pp. 126788

Author(s):

Jia Guan ◽

Mohammad Al-Amri ◽

Jingping Xu ◽

Nandi Bao ◽

Chengjie Zhu ◽

...

Keyword(s):

Hyperbolic Metamaterials ◽

Switch Design

Download Full-text

Switch Design for a High-Speed Switching Semi - Bridgeless Active Rectifier of Inductive Power Transfer Systems Considering Reverse Recovery Phenomenon

2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) ◽

10.23919/icpe2019-ecceasia42246.2019.8796995 ◽

2019 ◽

Author(s):

Sangjoon Ann ◽

Won-Jin Son ◽

Jongeun Byun ◽

Jae Han Lee ◽

Byoung Kuk Lee

Keyword(s):

High Speed ◽

Power Transfer ◽

Inductive Power Transfer ◽

Active Rectifier ◽

Switch Design ◽

High Speed Switching ◽

Inductive Power

Download Full-text

The role of optics in future high radix switch design

Proceeding of the 38th annual international symposium on Computer architecture - ISCA '11 ◽

10.1145/2000064.2000116 ◽

2011 ◽

Cited By ~ 35

Author(s):

Nathan Binkert ◽

Al Davis ◽

Norman P. Jouppi ◽

Moray McLaren ◽

Naveen Muralimanohar ◽

...

Keyword(s):

Switch Design ◽

High Radix

Download Full-text

Design Considerations of Packaging a High Voltage Current Switch

Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays ◽

10.1115/ipack2015-48714 ◽

2015 ◽

Cited By ~ 1

Author(s):

Ankan De ◽

Adam Morgan ◽

Subhashish Bhattacharya ◽

Douglas C. Hopkins

Keyword(s):

High Voltage ◽

Power Devices ◽

Variable Parameters ◽

Package Design ◽

Current Switch ◽

Density Distributions ◽

Design Considerations ◽

Parasitic Parameters ◽

Electric Potentials ◽

Switch Design

In this paper an attempt has been made to demonstrate various package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode has been analyzed in regards to gate terminal operation and the parasitic line inductance of the structure. ANSYS Q3D/MAXWELL software have been used to analyze and extract parasitic inductance and capacitances in the package along with electromagnetic fields, electric potentials, and current density distributions throughout the package for variable parameters. SIMPLIS-SIMETRIX is used to simulate typical switch behavior for different parasitic parameters under hard switched conditions. Various simulation results have then been used to redesign and justify the optimized package structure for the final current switch design. The thermal behavior of such a package is also conducted in COMSOL in order to ensure that the thermal ratings of the power devices is not exceeded, and to understand where potentially harmful hotspots could arise and estimate the maximum attainable frequency of operation. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch package.

Download Full-text