Silicon-Germanium (SiGe) composition and thickness determination via simultaneous smallspot XPS and XRF measurements

2014 ◽  
Author(s):  
Benoit L'herron ◽  
Nicolas Loubet ◽  
Qing Liu ◽  
Wei Ti Lee ◽  
Mark Klare ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Thickness Determination

Quantitative x-ray microanalysis and thickness determination using ζ factor

1996 ◽  
Vol 54 ◽  
pp. 580-581
Author(s):  
M. Watanabe ◽  
Z. Horita ◽  
M. Nemoto
Keyword(s):  
Diffusion Couple ◽  
Extrapolation Method ◽  
Thin Specimen ◽  
Beam Position ◽  
X Ray ◽  
Thickness Determination ◽  
Experimental Limitation ◽  
X Ray Absorption

X-ray absorption in quantitative x-ray microanalysis of thin specimens may be corrected without knowledge of thickness when the extrapolation method or the differential x-ray absorption (DXA) method is used. However, there is an experimental limitation involved in each method. In this study, a method is proposed to overcome such a limitation. The method is developed by introducing the ζ factor and by combining the extrapolation method and DXA method. The method using the ζ factor, which is called the ζ-DXA method in this study, is applied to diffusion-couple experiments in the Ni-Al system.For a thin specimen where incident electrons are fully transparent, the characteristic x-ray intensity generated from a beam position, I, may be represented as I = (NρW/A)Qωaist.

Convergent-beam thickness determination: The advantages of digital imaging

1994 ◽  
Vol 52 ◽  
pp. 420-421
Author(s):  
Stuart McKernan ◽  
C. Barry Carter
Keyword(s):  
Intensity Variation ◽  
Convergent Beam Electron Diffraction ◽  
Digital Data ◽  
Thickness Determination ◽  
Frequent Use ◽  
Automated Processing ◽  
Beam Thickness ◽  
Convergent Beam ◽  
Remarkable Agreement

Convergent-beam electron diffraction (CBED) patterns contain an immense amount of information relating to the structure of the material from which they are obtained. The analysis of these patterns has progressed to the point that under appropriate, well specified conditions, the intensity variation within the CBED discs may be understood in a quantitative sense. Rossouw et al for example, have produced numerical simulations of zone-axis CBED patterns which show remarkable agreement with experimental patterns. Spence and co-workers have obtained the structure factor parameters for lowindex reflections using the intensity variation in 2-beam CBED patterns. Both of these examples involve the use of digital data. Perhaps the most frequent use for quantitative CBED analysis is the thickness determination described by Kelly et al. This analysis has been implemented in a variety of different ways; from real-time, in-situ analysis using the microscope controls, to measurements of photographic prints with a ruler, to automated processing of digitally acquired images. The potential advantages of this latter process will be presented.

Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

2001 ◽  
Vol 171 (7) ◽  
pp. 689 ◽  
Author(s):  
Yu.B. Bolkhovityanov ◽  
Oleg P. Pchelyakov ◽  
S.I. Chikichev
Keyword(s):  
Silicon Germanium

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

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