Single Electron Transistor Fabrication using Focused Ion Beam direct write technique

2006 ◽  
Author(s):  
P.S. Kumar Karre ◽  
P.L. Bergstrom ◽  
M. Govind ◽  
S.P. Karna
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Direct Write ◽  
Transistor Fabrication

scholarly journals Room temperature operational single electron transistor fabricated by focused ion beam deposition

2007 ◽  
Vol 102 (2) ◽  
pp. 024316 ◽  
Author(s):  
P. Santosh Kumar Karre ◽  
Paul L. Bergstrom ◽  
Govind Mallick ◽  
Shashi P. Karna
Keyword(s):  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Ion Beam Deposition ◽  
Beam Deposition

scholarly journals Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

2010 ◽  
Vol 96 (26) ◽  
pp. 262511 ◽  
Author(s):  
Pashupati Dhakal ◽  
G. McMahon ◽  
S. Shepard ◽  
T. Kirkpatrick ◽  
J. I. Oh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

scholarly journals Focused Ion Beam Direct Write Nanofabrication of Surface Phonon Polariton Metamaterial Nanostructures

2014 ◽  
Vol 20 (S3) ◽  
pp. 358-359 ◽  
Author(s):  
N. D. Bassim ◽  
A. Giles ◽  
J. D. Caldwell ◽  
L. E. Ocola
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write ◽  
Surface Phonon ◽  
Surface Phonon Polariton

Commercial Applications and Review for Direct Write Technologies

2000 ◽  
Vol 624 ◽  
Author(s):  
Kenneth H. Church ◽  
Charlotte Fore ◽  
Terry Feeley
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Direct Write ◽  
Laser Chemical Vapor Deposition ◽  
The Past ◽  
Design Engineers ◽  
True Value ◽  
Making A Difference ◽  
Commercial Applications

ABSTRACTDirect write in the past has generated the excitement of possibly replacing photoresist for all electronic applications. Removing the mask would substantially reduce the number of steps required to produce electronic circuits. A reduction in steps represented time and dollar savings. The advantage of being able to direct write a manufacturable device would also save time and money in the design process as well. With all of the obvious advantages, it seemed inevitable that research dollars would continue to mount and thus overcome the obstacles preventing this technology from becoming more than a novel technique used in laboratories. As Moore's law began to settle in, so did photoresist and direct write was little more than a novelty.That was then, and this is now. Developers have come to terms with the true value direct write can supply to the manufacturers and design engineers. Techniques such as Focused Ion Beam (FIB), Laser Chemical Vapor Deposition (LCVD), ink jetting and ink penning have found real applications that are making a difference in industry. A summary will be presented describing the various direct write techniques, their current applications and the possible or probable applications.

Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition

1999 ◽  
Vol 28 (3) ◽  
pp. 136-140 ◽  
Author(s):  
A. A. Iliadis ◽  
S. N. Andronescu ◽  
W. Yang ◽  
R. D. Vispute ◽  
A. Stanishevsky ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write
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