Optical flatness and alignment mark contrast in highly planar technologies

2002 ◽  
Author(s):  
J. Golz ◽  
A. Martin ◽  
B. Chen
Keyword(s):  
Alignment Mark

Alignment robustness for 90 nm and 65 nm node through copper alignment mark integration optimization

2005 ◽  
Author(s):  
Scott Warrick ◽  
Paul Hinnen ◽  
Rob Morton ◽  
Kevin Cooper ◽  
Pierre-Olivier Sassoulas ◽  
...  
Keyword(s):  
Alignment Mark

Alignment Mark Optimization to Reduce Tool- and Wafer-Induced Shift for XRA-1000

1999 ◽  
Vol 38 (Part 1, No. 12B) ◽  
pp. 7065-7070 ◽  
Author(s):  
Hideki Ina ◽  
Koichi Sentoku ◽  
Takahiro Matsumoto ◽  
Hiroaki Sumitani ◽  
Muneyoshi Suita
Keyword(s):  
Alignment Mark

Improvement of 90nm technology VIA photo alignment through TiN hard mask removing above previous photo alignment mark area

2008 ◽  
Author(s):  
Wen-Shiang Liao ◽  
Hsin-Hung Lin ◽  
Yu-Huan Liu ◽  
Mao-Chyuan Tang ◽  
Sheng-Yi Huang ◽  
...  
Keyword(s):  
Hard Mask ◽  
Alignment Mark ◽  
Photo Alignment

Fractured Alignment Mark Technology For Wafer Steppers

1986 ◽  
Author(s):  
G. A. Hungerford ◽  
D. Rector ◽  
D. Sandford ◽  
D. W. Tomes
Keyword(s):  
Alignment Mark

Technology of alignment mark in electron beam lithography

2014 ◽  
Author(s):  
Min Zhao ◽  
Tang Xu ◽  
Baoqin Chen ◽  
Jiebin Niu
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Alignment Mark

The Functional Relation between Alignment Accuracy and Vertical Separation of Alignment Marks

1970 ◽  
Vol 12 (6) ◽  
pp. 599-604 ◽  
Author(s):  
Anthony S. Squillace ◽  
Ann R. Bien
Keyword(s):  
Significant Interaction ◽  
Functional Relation ◽  
Separation Distance ◽  
Alignment Error ◽  
Vertical Separation ◽  
Ambient Illumination ◽  
Third Order ◽  
Order Polynomial ◽  
Alignment Mark ◽  
Alignment Marks

The purpose of this study was to determine the functional relation between alignment error (horizontal offset of two alignment marks) and the vertical separation distance of the alignment marks when the alignment is attempted. This relation was studied with four types of alignment marks and two extreme levels of ambient illumination. The vertical separations ranged from 0.050 to 3.2 in. A significant interaction was found between vertical separation distance and alignment mark design: designs which provided vernier cues were found to be the most effective at greater vertical separation distances. The relation between alignment error and vertical separation can be described by a third-order polynomial.

New criterion about the topography of W-CMP wafer's alignment mark

2003 ◽  
Author(s):  
Hideki Ina ◽  
Takahiro Matsumoto ◽  
Koichi Sentoku ◽  
Katsuhiro Matsuyama ◽  
Kazuhiko Katagiri
Keyword(s):  
Alignment Mark ◽  
New Criterion
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