Molecular contamination on silicon wafers: a theoretical study

2002 ◽  
Author(s):  
Sheng-Bai Zhu
Keyword(s):  
Theoretical Study ◽  
Silicon Wafers

Theoretical Study of Molecular Contamination on Silicon Wafers: Kinetics

1998 ◽  
Vol 41 (5) ◽  
pp. 36-43 ◽  
Author(s):  
Sheng-Bai Zhu
Keyword(s):  
Gas Phase ◽  
Theoretical Study ◽  
Material Selection ◽  
Silicon Wafers ◽  
Surface Kinetics ◽  
Simple Formulation ◽  
Gas Phase Molecules ◽  
Inorganic Molecules ◽  
Molecular Contaminants ◽  
Mass Transport Mechanisms

In an earlier paper ["Theoretical Study of Molecular Contaminants on Silicon wafers: Interactions Between Molecular Contaminants and the Silicon Surface," Journal of the IEST, July/August 1998] a simple formulation was developed to describe interactions between gas phase molecules and solid surfaces.1 Adsorption energies of various organic/inorganic molecules on silicon wafer surfaces were derived, In this paper, the relationship between the gas phase molecule concentration and the surface contamination density based on simple kinetic theories is established. The most important approximations in this derivation include the neglect of possible chemical reactions on the surface and the assumption that gas phase concentrations of pollutants are constants, both in time and in location. The mass transport mechanisms are ignored. With these approximations, the equilibrium in surface kinetics can be reached almost instantly for all the molecules investigated, even for those having activation energies as high as ∼ 72 kJ/mole. This agrees with the experimental data for moisture adsorption on stainless steel.2 A guide is provided for material selection.

scholarly journals Theoretical study on influence of photon reabsorption on photocarrier radiometric characteristics of silicon wafers

2019 ◽  
Vol 68 (4) ◽  
pp. 047201
Author(s):  
Qian Wang ◽  
Wei-Guo Liu ◽  
Lei Gong ◽  
Li-Guo Wang ◽  
Ya-Qing Li ◽  
...  
Keyword(s):  
Theoretical Study ◽  
Silicon Wafers ◽  
Radiometric Characteristics

Theoretical Study of Molecular Contamination on Silicon Wafers: Interactions Between Molecular Contaminants and the Silicon Surface

1998 ◽  
Vol 41 (4) ◽  
pp. 30-35 ◽  
Author(s):  
Sheng-Bai Zhu
Keyword(s):  
Gas Phase ◽  
Theoretical Study ◽  
Removal Rate ◽  
Potential Energy Function ◽  
Silicon Wafers ◽  
Solid Surfaces ◽  
Pauli Repulsion ◽  
Inorganic Molecules ◽  
Molecular Contaminants ◽  
Wafer Surfaces

Molecular contamination on silicon wafers is mainly determined by the gas phase concentrations of the contaminants, the adsorption energy of the molecules on the surface, and their removal rate. In this paper, a potential energy function is developed to describe interactions between adsorbed molecules and solid surfaces. Ignoring possible chemical reactions at the interface, the development is based on a combination of the Pauli repulsion, the dispersion attraction, and the Coulomb interaction between real and image charges. This potential function will be used to predict adsorption energies of various organic/inorganic molecules, including oxygen, halogens, aliphatic hydrocarbons, acids, and inorganic carbon-containing compounds on silicon wafer surfaces.

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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