On-chip bond-wire antennas on CMOS-grade silicon substrates

2008 ◽  
Author(s):  
N. Varanasi ◽  
Byunghoo Jung ◽  
D. Peroulis
Keyword(s):  
Silicon Substrates ◽  
Bond Wire ◽  
Grade Silicon ◽  
Wire Antennas ◽  
On Chip

Impact of Multilayer Stack-ups on Bond Wire Antennas at Millimetre-wave Frequencies

2018 ◽  
Author(s):  
I. Ndip ◽  
M. Schneider-Ramelow ◽  
M. Huhn ◽  
F. Brandenburger ◽  
M. Hempel ◽  
...  
Keyword(s):  
Millimetre Wave ◽  
Bond Wire ◽  
Wire Antennas

A Novel Scheme for Wide Bandwidth Chip-to-Chip Communications

2007 ◽  
Vol 4 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Qing Liu ◽  
Patrick Fay ◽  
Gary H. Bernstein
Keyword(s):  
Integrated Circuits ◽  
Coplanar Waveguide ◽  
Impedance Matching ◽  
Three Dimensional ◽  
Fabrication Process ◽  
Silicon Substrates ◽  
Electromagnetic Simulations ◽  
Communication Paradigm ◽  
On Chip ◽  
Test Chips

Quilt Packaging (QP), a novel chip-to-chip communication paradigm for system-in-package integration, is presented. By forming protruding metal nodules along the edges of the chips and interconnecting integrated circuits (ICs) through them, QP offers an approach to ameliorate the I/O speed bottleneck. A fabrication process that includes deep reactive ion etching, electroplating, and chemical-mechanical polishing is demonstrated. As a low-temperature process, it can be easily integrated into a standard IC fabrication process. Three-dimensional electromagnetic simulations of coplanar waveguide QP structures have been performed, and geometries intended to improve impedance matching at the interface between the on-chip interconnects and the chip-to-chip nodule structures were evaluated. Test chips with 100 μm wide nodules were fabricated on silicon substrates, and s-parameters of chip-to-chip interconnects were measured. The insertion loss of the chip-to-chip interconnects was as low as 0.2 dB at 40 GHz. Simulations of 20 μm wide QP structures suggest that the bandwidth of the inter-chip nodules is expected to be above 200 GHz.

Impact of Process Tolerances on the Performance of Bond Wire Antennas at RF/Microwave Frequencies

2011 ◽  
Vol 2011 (1) ◽  
pp. 000914-000920
Author(s):  
Ivan Ndip ◽  
Abdurrahman Öz ◽  
Christian Tschoban ◽  
Stefan Schmitz ◽  
Martin Schneider-Ramelow ◽  
...  
Keyword(s):  
Resonance Frequency ◽  
Wire Antenna ◽  
60 Ghz ◽  
Planar Antennas ◽  
Microwave Frequencies ◽  
Bond Wires ◽  
Bond Wire ◽  
Wire Antennas ◽  
The Impact ◽  
Rf Microwave

Due to the multitude of advantages bond wire antennas have over conventional planar antennas (especially on-chip planar antennas), they have received much research attention within the last four years. The focus of the contributions made so far has been on exploiting different configurations of single-element and array bond wire antennas for short-range applications at RF/microwave frequencies. However, the effects of process tolerances of bond wires on the radiation characteristics of bond wire antennas have not been studied in published literature. Therefore in this paper, we investigate the impact of up to 20% fluctuations in the parameters of bond wires on the performance of 42 GHz and 60 GHz bond wire antennas. Our results reveal that the length and radius of bond wires are the most and least sensitive parameters, respectively. Furthermore, the severity of the impact of process tolerances depends on the impedance bandwidth of the original antenna, before considering the tolerances. For example, a 10% change in the length of a bond wire causes the resonance frequency of a 42 GHz antenna to be shifted out of the specified 3GHz bandwidth (40.5 GHz–43.5 GHz) required for point-to-point communication. However, although a 10% change in length of a bond wire yields a 2.5 GHz shift in the resonance frequency of a 60 GHz bond wire antenna, it doesn’t completely detune the antenna because of the original 6 GHz bandwidth available, prior to the fluctuation. Therefore, to prevent the impact of process tolerances from severely degrading the performance bond wire antennas, these antennas should be designed to have larger bandwidths than specified. For experimental verification, a bond wire antenna was designed, fabricated and measured. Very good correlation was obtained between measurement and simulation.

Integrated Photonic Circuits in Gallium Nitride and Aluminum Nitride

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450001 ◽  
Author(s):  
Chi Xiong ◽  
Wolfram Pernice ◽  
Carsten Schuck ◽  
Hong X. Tang
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Silicon Substrates ◽  
Material System ◽  
Group Iii ◽  
Electro Optic ◽  
New Material ◽  
Nanophotonic Circuits ◽  
Group Iii Nitride ◽  
On Chip

Integrated optics is a promising optical platform both for its enabling role in optical interconnects and applications in on-chip optical signal processing. In this paper, we discuss the use of group III-nitride (GaN, AlN) as a new material system for integrated photonics compatible with silicon substrates. Exploiting their inherent second-order nonlinearity we demonstrate and second, third harmonic generation in GaN nanophotonic circuits and high-speed electro-optic modulation in AlN nanophotonic circuits.

Vertically aligned graphene nanosheets on silicon using an ionic liquid electrolyte: towards high performance on-chip micro-supercapacitors

2015 ◽  
Vol 3 (38) ◽  
pp. 19254-19262 ◽  
Author(s):  
David Aradilla ◽  
Marc Delaunay ◽  
Saïd Sadki ◽  
Jean-Michel Gérard ◽  
Gérard Bidan
Keyword(s):  
High Performance ◽  
Electron Cyclotron Resonance ◽  
Graphene Nanosheets ◽  
Chemical Vapor ◽  
Liquid Electrolyte ◽  
Silicon Substrates ◽  
Ionic Liquid Electrolyte ◽  
Vertically Aligned ◽  
On Chip ◽  
Resonance Plasma

Vertically oriented graphene nanosheets were synthesized by an alternative and simple approach based on electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-CVD) onto highly doped silicon substrates.

Experimental verification and analysis of analytical model of the shape of bond wire antennas

2017 ◽  
Vol 53 (14) ◽  
pp. 906-908 ◽  
Author(s):  
I. Ndip ◽  
M. Huhn ◽  
F. Brandenburger ◽  
C. Ehrhardt ◽  
M. Schneider‐Ramelow ◽  
...  
Keyword(s):  
Analytical Model ◽  
Experimental Verification ◽  
Bond Wire ◽  
Wire Antennas

Ultralow Temperature Processing and Integration of Dielectric Resonators on Silicon Substrates for System-on-Chip Applications

2008 ◽  
Vol 55 (7) ◽  
pp. 1727-1732 ◽  
Author(s):  
Pazhoor V. Bijumon ◽  
Alois P. Freundorfer ◽  
Michael Sayer ◽  
Yahia M. M. Antar
Keyword(s):  
System On Chip ◽  
Dielectric Resonators ◽  
Silicon Substrates ◽  
Ultralow Temperature ◽  
On Chip
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