High isolation RF MEMS SPDT switch for 60 GHz ISM band antenna routing applications

2016 ◽  
Author(s):  
Anushruti Jaiswal ◽  
Sukomal Dey ◽  
Mahesh P. Abegaonkar ◽  
Shiban K. Koul
Keyword(s):  
Rf Mems ◽  
60 Ghz ◽  
Ism Band ◽  
High Isolation

A 24 GHz ISM-Band Doppler Radar Antenna With High Isolation Characteristic for Moving Target Sensing Applications

2019 ◽  
Vol 18 (7) ◽  
pp. 1532-1536 ◽  
Author(s):  
Sungpeel Kim ◽  
Dong Kyoo Kim ◽  
Youjin Kim ◽  
Jaehoon Choi ◽  
Kyung-Young Jung
Keyword(s):  
Doppler Radar ◽  
Moving Target ◽  
Ism Band ◽  
High Isolation ◽  
Sensing Applications ◽  
Radar Antenna ◽  
24 Ghz

scholarly journals Design and simulation of low actuation voltage RF MEMS shunt capacitive switch with serpentine flexures&rectangular perforations

2018 ◽  
Vol 7 (2.31) ◽  
pp. 4 ◽  
Author(s):  
K Jayavardhani ◽  
S K. Noureen Fathima ◽  
K Bhima Sankar ◽  
K Kavya Sri ◽  
S Sunithamani
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Air Gap ◽  
Spring Constant ◽  
Squeeze Film ◽  
Capacitive Switch ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Rf Performance

This paper presents the design and simulation of RF MEMS shunt capacitive switch with low actuation voltage, low insertion loss and high isolation. Actuation voltage depends on the parameters like air gap, spring constant and actuation area. In this design, we have proposed a serpentine meander structure to reduce the spring constant of the beam thus reducing actuation voltage. The rectangular perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. The proposed switch has attained a low actuation voltage of 4.5V for a displacement of 0.84μm. The air gap between the beam and the dielectric is 1μm. This radio frequency (RF) MEMS shunt switch is designed and simulated using COMSOL Multiphysics 5.2. The RF performance of the shunt switch is analyzed in Ansoft HFSS 13 and the results show that the return loss was about -13.50 dB at 20GHz in the OFF state and -8.5 dB at 18 GHz in the ON state. A high isolation of -36.00 dB was achieved in the OFF state at a frequency of 5GHz and a low insertion loss is obtained. The results show that the switch is suitable for wireless applications operating in the frequency range from 5 to 20GHz. 

Aperture-coupled on-chip patch antennas for ISM band 60 GHz

2017 ◽  
Author(s):  
Marcos Gomes Bernardo ◽  
Raimundo Carlos da Silva Veria Freire ◽  
Anyelle Keila Farias de Queiroz ◽  
Jessyca Iasmyn Lucena Araujo ◽  
Samuel Medeiros Araujo Morais ◽  
...  
Keyword(s):  
Patch Antennas ◽  
60 Ghz ◽  
Ism Band ◽  
On Chip

A study on high isolation RF MEMS switch

2006 ◽  
Author(s):  
Lingling Lin ◽  
Guoqing Hu ◽  
Zonghua Lin ◽  
Wenyan Liu
Keyword(s):  
Rf Mems ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch

Capacitive and ohmic RF NEMS switches based on vertical carbon nanotubes

2010 ◽  
Vol 2 (5) ◽  
pp. 433-440 ◽  
Author(s):  
A. Ziaei ◽  
M. Charles ◽  
M. Le Baillif ◽  
S. Xavier ◽  
A. Caillard ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
High Frequency ◽  
Simulation Software ◽  
Operating Voltage ◽  
60 Ghz ◽  
Deposition Method ◽  
Rf Switch ◽  
High Isolation ◽  
Contact Switch ◽  
Walled Cnts

The objective is to demonstrate a reproducible carbon nanotube (CNT)-based technology for radio frequency (RF) switch working in the range of 40–60 GHz and fulfilling the specifications: low losses, high isolation, and an operating voltage below 30 V. The first processed component had an operating voltage of 14 V for an ohmic contact in a Nano-Electro Mechanical System (NEMS) tweezer design. This result is confirmed by theory with an operating voltage of 13 V. A capacitive-contact NEMS is also developed using multi-walled CNTs (MWCNTs) coated with a SiO2 dielectric layer deposited by electron beam induced deposition method (EBID). High Frequency Simulation Software (HFSS) RF-simulation on an innovative NEMS geometry shows encouraging results with transmission ratios between “on” state and “off” state up to 34% for ohmic-contact switch and 25% for a capacitive-contact switch.

A high-force and high isolation metal-contact RF MEMS switch

2017 ◽  
Vol 23 (10) ◽  
pp. 4699-4708 ◽  
Author(s):  
Peigang Deng ◽  
Ning Wang ◽  
Feng Cai ◽  
Longquan Chen
Keyword(s):  
Rf Mems ◽  
Metal Contact ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch
Sign in / Sign up

Export Citation Format

Share Document