Ka‐band RF MEMS capacitive switch with low loss, high isolation, long‐term reliability and high power handling based on GaAs MMIC technology

2017 ◽  
Vol 11 (6) ◽  
pp. 942-948 ◽  
Author(s):  
Chenlei Chu ◽  
Xiaoping Liao ◽  
Hao Yan
Keyword(s):  
High Power ◽  
Rf Mems ◽  
Low Loss ◽  
Capacitive Switch ◽  
Ka Band ◽  
High Isolation ◽  
Power Handling

CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

2018 ◽  
Vol 57 (10) ◽  
pp. 1002B6
Author(s):  
Hiroaki Yamazaki ◽  
Yoshihiko Kurui ◽  
Tomohiro Saito ◽  
Etsuji Ogawa ◽  
Kei Obara ◽  
...  
Keyword(s):  
High Power ◽  
Rf Mems ◽  
Tunable Capacitor ◽  
Power Handling ◽  
Series Capacitor

scholarly journals Design and simulation of low actuation voltage RF MEMS shunt capacitive switch with serpentine flexures&rectangular perforations

2018 ◽  
Vol 7 (2.31) ◽  
pp. 4 ◽  
Author(s):  
K Jayavardhani ◽  
S K. Noureen Fathima ◽  
K Bhima Sankar ◽  
K Kavya Sri ◽  
S Sunithamani
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Air Gap ◽  
Spring Constant ◽  
Squeeze Film ◽  
Capacitive Switch ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Rf Performance

This paper presents the design and simulation of RF MEMS shunt capacitive switch with low actuation voltage, low insertion loss and high isolation. Actuation voltage depends on the parameters like air gap, spring constant and actuation area. In this design, we have proposed a serpentine meander structure to reduce the spring constant of the beam thus reducing actuation voltage. The rectangular perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. The proposed switch has attained a low actuation voltage of 4.5V for a displacement of 0.84μm. The air gap between the beam and the dielectric is 1μm. This radio frequency (RF) MEMS shunt switch is designed and simulated using COMSOL Multiphysics 5.2. The RF performance of the shunt switch is analyzed in Ansoft HFSS 13 and the results show that the return loss was about -13.50 dB at 20GHz in the OFF state and -8.5 dB at 18 GHz in the ON state. A high isolation of -36.00 dB was achieved in the OFF state at a frequency of 5GHz and a low insertion loss is obtained. The results show that the switch is suitable for wireless applications operating in the frequency range from 5 to 20GHz. 

A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch

2017 ◽  
Vol 24 (1) ◽  
pp. 561-574 ◽  
Author(s):  
Li-Ya Ma ◽  
Anis Nurashikin Nordin ◽  
Norhayati Soin
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Low Loss ◽  
Capacitive Switch ◽  
Novel Design
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