Impact of bonding temperature on the performance of In0.6Ga0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology

2012 ◽  
Author(s):  
Che-Yang Chiang ◽  
Heng-Tung Hsu ◽  
Chien-I Kuo ◽  
Ching-Te Wang ◽  
Wee Chin Lim ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Flip Chip ◽  
Bonding Temperature ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

V-Band Flip-Chip Assembled Gain Block Using In$_{0.6}$Ga$_{0.4}$As Metamorphic High-Electron-Mobility Transistor Technology

2011 ◽  
Vol 4 (10) ◽  
pp. 104105 ◽  
Author(s):  
Che-Yang Chiang ◽  
Heng-Tung Hsu ◽  
Chin-Te Wang ◽  
Chien-I Kuo ◽  
Heng-Shou Hsu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Flip Chip ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
V Band

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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