Topology gradient optimization of dielectric material distribution for the design of microwave components

2007 ◽  
Author(s):  
H. Khalil ◽  
S. Bila ◽  
M. Aubourg ◽  
D. Baillargeat ◽  
S. Verdeyme ◽  
...  
Keyword(s):  
Dielectric Material ◽  
Material Distribution ◽  
Gradient Optimization ◽  
Microwave Components

Topology gradient optimization in 2-D and 3-D for the design of microwave components

2008 ◽  
Vol 50 (10) ◽  
pp. 2739-2743 ◽  
Author(s):  
Hassan Khalil ◽  
Atousa Assadihaghi ◽  
Stéphane Bila ◽  
Dominique Baillargeat ◽  
M. Aubourg ◽  
...  
Keyword(s):  
Gradient Optimization ◽  
Microwave Components

Design of Microwave Components using Topology Gradient Optimization

2006 ◽  
Author(s):  
A. Assadihaghi ◽  
S. Bila ◽  
C. Durousseau ◽  
D. Baillargeat ◽  
M. Aubourg ◽  
...  
Keyword(s):  
Gradient Optimization ◽  
Microwave Components

ANALYSIS ON THE EFFECT OF DIELECTRIC MATERIAL AND COPPER THICKNESS OF SUBSTRATE TOWARDS THE PERFORMANCE OF ULTRA WIDEBAND GROUND-SLOTTED T-SHAPED POWER DIVIDER

2015 ◽  
Vol 77 (10) ◽  
Author(s):  
Khairul Huda Yusof ◽  
Norhudah Seman ◽  
Mohd Haizal Jamaluddin
Keyword(s):  
Dielectric Material ◽  
Ultra Wideband ◽  
Power Divider ◽  
Wireless System ◽  
High Data ◽  
Fifth Generation ◽  
Front End ◽  
Microwave Components ◽  
Thermoset Polymer ◽  
Increasing Demand

Nowadays, the fifth generation (5G) wireless system is extensively studied to fulfill the continuously increasing demand for high data rate and mobility in wireless communication applications. Thus, to cope with this demand, various researches are required for front-end microwave components, which includes power divider. Therefore, in this article, the design and analysis of ultra wideband T-shaped power divider is presented. Two substrates are chosen in the design, which are Rogers RO4003C and TMM4 with copper thickness of 17 µm and 35 µm to analyze their effect towards ultra wideband performance of the designed power divider. The design and analysis are performed by using CST Microwave Studio. The optimal performance of the designed power divider is subjected to dielectric material and the copper thickness of the substrate. Where, the best design is obtained using TMM4 substrate that made of ceramic thermoset polymer with 35 µm copper thickness.

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Mathematical model to predict the characteristics of polarization in dielectric materials: The concept of piezoelectrcity and electrostriction

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Mathematical Model ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Dielectric Material ◽  
Strain Curve ◽  
Dielectric Materials ◽  
Lead Zirconate ◽  
Simulation Software ◽  
Constitutive Law ◽  
Basic Material

Model was developed for the prediction of polarization characteristics in a dielectric material exhibiting piezoelectricity and electrostriction based on mathematical equations and MATLAB computer simulation software. The model was developed based on equations of polarization and piezoelectric constitutive law and the functional coefficient of Lead Zirconate Titanate (PZT) crystal material used was 2.3×10-6 m (thickness), the model further allows the input of basic material and calculation of parameters of applied voltage levels, applied stress, pressure, dielectric material properties and so on, to generate the polarization curve, strain curve and the expected deformation change in the material length charts. The mathematical model revealed that an application of 5 volts across the terminals of a 2.3×10-6 m thick dielectric material (PZT) predicted a 1.95×10-9 m change in length of the material, which indicates piezoelectric properties. Both polarization and electric field curve as well as strain and voltage curve were also generated and the result revealed a linear proportionality of the compared parameters, indicating a resultant increase in the electric field yields higher polarization of the dielectric materials atmosphere.

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