Fast impedance and pattern evaluation for phased arrays made of complex elements involving finite dielectric material

2007 ◽  
Author(s):  
C. Craeye ◽  
T. Gilles ◽  
X. Dardenne ◽  
R. Sarkis
Keyword(s):  
Phased Arrays ◽  
Dielectric Material

PRINTED QUASI-YAGI ANTENNAS WITH CENTER-END-FED DIPOLE DRIVER

2018 ◽  
pp. 19-23
Author(s):  
D. A. Bukhtiyarov ◽  
A. P. Gorbachev
Keyword(s):  
Printed Circuit Board ◽  
Phased Arrays ◽  
Dielectric Material ◽  
Circuit Board ◽  
Power Divider ◽  
The Novel ◽  
Printed Circuit ◽  
Radio Systems ◽  
Hybrid Ring

The novel realization of printed Yagi-Uda antenna is presented in this paper. Such the aerials are widely used in the modern telecommunication and radiolocation systems. The described method uses the nontraditional center-end-fed in-phase excitation through the hybrid ring two-way power divider. This divider behaves acceptable behavior, when all the lengths and clearances between printed conductors are optimized for Russian dielectric material FAF-4. This material is the successful discovery, when the aerial is excited through the subminiature version A connector that satisfies double-sided printed circuit board realization. The simulation-derived results indicate that the proposed aerial is the fan-beam radiator. This radiator is a good candidate for the use in the novel printed planar equidistant phased arrays for various radio systems including radiolocation, radio-finder arrangements, navigation an so on.

Phased Arrays for Radio Astronomy, Remote Sensing, and Satellite Communications

2018 ◽  
Author(s):  
Karl F. Warnick ◽  
Rob Maaskant ◽  
Marianna V. Ivashina ◽  
David B. Davidson ◽  
Brian D. Jeffs
Keyword(s):  
Remote Sensing ◽  
Radio Astronomy ◽  
Phased Arrays ◽  
Satellite Communications

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Mathematical model to predict the characteristics of polarization in dielectric materials: The concept of piezoelectrcity and electrostriction

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Mathematical Model ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Dielectric Material ◽  
Strain Curve ◽  
Dielectric Materials ◽  
Lead Zirconate ◽  
Simulation Software ◽  
Constitutive Law ◽  
Basic Material

Model was developed for the prediction of polarization characteristics in a dielectric material exhibiting piezoelectricity and electrostriction based on mathematical equations and MATLAB computer simulation software. The model was developed based on equations of polarization and piezoelectric constitutive law and the functional coefficient of Lead Zirconate Titanate (PZT) crystal material used was 2.3×10-6 m (thickness), the model further allows the input of basic material and calculation of parameters of applied voltage levels, applied stress, pressure, dielectric material properties and so on, to generate the polarization curve, strain curve and the expected deformation change in the material length charts. The mathematical model revealed that an application of 5 volts across the terminals of a 2.3×10-6 m thick dielectric material (PZT) predicted a 1.95×10-9 m change in length of the material, which indicates piezoelectric properties. Both polarization and electric field curve as well as strain and voltage curve were also generated and the result revealed a linear proportionality of the compared parameters, indicating a resultant increase in the electric field yields higher polarization of the dielectric materials atmosphere.

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