Electromagnetic noise coupling and mitigation for fast response on-die temperature sensing in high power modules

2016 ◽  
Author(s):  
Chengcheng Yao ◽  
Pengzhi Yang ◽  
Mingzhi Leng ◽  
He Li ◽  
Lixing Fu ◽  
...  
Keyword(s):  
High Power ◽  
Fast Response ◽  
Temperature Sensing ◽  
Electromagnetic Noise ◽  
Noise Coupling ◽  
Power Modules ◽  
Die Temperature

Electromagnetic Noise Mitigation for Ultrafast on-Die Temperature Sensing in High-Power Modules

2018 ◽  
Vol 33 (2) ◽  
pp. 1178-1187 ◽  
Author(s):  
Chengcheng Yao ◽  
Pengzhi Yang ◽  
Huanyu Chen ◽  
Mingzhi Leng ◽  
He Li ◽  
...  
Keyword(s):  
High Power ◽  
Temperature Sensing ◽  
Noise Mitigation ◽  
Electromagnetic Noise ◽  
Power Modules ◽  
Die Temperature

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

A new high capacity compact power modules for high power EV/HEV inverters

2016 ◽  
Author(s):  
Seiichiro Inokuchi ◽  
Shoji Saito ◽  
Arata Izuka ◽  
Yuki Hata ◽  
Shinji Hatae ◽  
...  
Keyword(s):  
High Power ◽  
High Capacity ◽  
Power Modules

Study of Electromagnetic Noise Coupling in Wireless-LAN Communication System

2010 ◽  
Vol E93-B (7) ◽  
pp. 1776-1780 ◽  
Author(s):  
Mizuki IWANAMI ◽  
Hiroshi FUKUDA ◽  
Manabu KUSUMOTO ◽  
Takashi HARADA
Keyword(s):  
Communication System ◽  
Wireless Lan ◽  
Electromagnetic Noise ◽  
Noise Coupling

Temperature Sensing of High Power Generator Stator using DTS

2014 ◽  
Author(s):  
João Paulo Bazzo ◽  
Felipe Mezzadri ◽  
Cicero Martelli ◽  
Erlon Vagner da Silva ◽  
Daniel Rodrigues Pipa ◽  
...  
Keyword(s):  
High Power ◽  
Temperature Sensing ◽  
Power Generator ◽  
Generator Stator

Recent DOE Sponsored Electrochemical Capacitor Test Results

1999 ◽  
Vol 575 ◽  
Author(s):  
R. B. Wright ◽  
T. C. Murphy ◽  
D. K. Jamison ◽  
S. A. Rogers
Keyword(s):  
High Power ◽  
Electrochemical Capacitor ◽  
Fast Response ◽  
Department Of Energy ◽  
Constant Current ◽  
Specific Power ◽  
Equivalent Series Resistance ◽  
Test Results ◽  
Constant Power ◽  
Energy Products

ABSTRACTElectrochemical capacitors (ultracapacitors) are being developed for hybrid vehicles as candidate power assist devices for the fast response engine and for other energy storage systems that can utilize the high power densities available from these devices. Ultracapacitors show promise toward being able to accept high regenerative pulses and high power delivery capabilities while exhibiting very high cycle life. This paper will present recent test data from two U.S. Department of Energy (DOE) supported ultracapacitor projects designed to meet the fast response engine requirements. Constant-current and constant-power test results will be presented that have been acquired from recent prototype capacitors supplied by SAFT America, Inc. (ten devices), and Maxwell Energy Products, Inc. (two devices). The SAFT capacitors are rated at 0.5 V to 3 V with capacitance ratings ranging from 135 F to 138 F. Capacitor cells rated at 2.3 V and 101.4 F were also evaluated that were produced by Maxwell Energy Products, Inc. Both sets of devices used proprietary carbon electrodes with non-aqueous electrolytes in their design. From the constant-current discharge tests, the discharge current dependence of the capacitance, equivalent series resistance, and RC-time constant were determined as well as the capacitors’ voltage dependence of the capacitance. Constant-power discharge tests permitted the specific energy as a function of the specific power to be determined, and also the discharge/charge round trip efficiency as a function of the magnitude of the constant-power discharge.

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