scholarly journals A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications

2012 ◽  
Author(s):  
Thangarasu Bharatha Kumar ◽  
Kaixue Ma ◽  
Kiat Seng Yeo ◽  
Wei Meng Lim
Keyword(s):  
Low Power ◽  
Output Power ◽  
Power Amplifier ◽  
High Output Power ◽  
Sige Bicmos ◽  
High Output

A compact H-band Power Amplifier with High Output Power

2021 ◽  
Author(s):  
Ahmed S. H. Ahmed ◽  
Utku Soylu ◽  
Munkyo Seo ◽  
Miguel Urteaga ◽  
Mark J. W. Rodwell
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Output Power ◽  
Band Power ◽  
High Output

scholarly journals A Modified Design of Class-E Power Amplifier with Balanced FETs and High Output Power for RFID Applications

2021 ◽  
Vol 19 ◽  
pp. 28-37
Author(s):  
Muhammad Noaman Zahid ◽  
Jianliang Jiang ◽  
Heng Lu ◽  
Hengli Zhang
Keyword(s):  
Radio Frequency ◽  
Output Power ◽  
Power Amplifier ◽  
Radio Frequency Identification ◽  
Field Effect Transistors ◽  
High Output Power ◽  
Matching Network ◽  
Power Added Efficiency ◽  
High Output ◽  
Class E

In Radio Frequency (RF) communication, a Power Amplifier (PA) is used to amplify the signal at the required power level with less utilization of Direct Current (DC) power. The main characteristic of class-E PA is sturdy nonlinearity due to the switching mode action. In this study, a modified design of class-E PA with balanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and high output power for Electronic Article Surveillance (EAS) Radio Frequency Identification (RFID) application is presented. MOSFETs are adjusted to have high output performance of about 80% for RFID-based EAS system. A matching network is also proposed for accurate matching because there are differences in the behavior between RF waves and low frequency waves. The design of a matching network is a tradeoff among the complexity, adjustability, implementation, and bandwidth for the required output power and frequency. The implemented PA is capable of providing 44.8 dBm output power with Power-Added Efficiency (PAE) of 78.5% at 7.7 MHz to 8.7 MHz.

High output power 243 GHz voltage controlled oscillator in a 130 nm SiGe BiCMOS process

2018 ◽  
Vol 54 (6) ◽  
pp. 348-350 ◽  
Author(s):  
Peigen Zhou ◽  
Jixin Chen ◽  
Pinpin Yan ◽  
Debin Hou ◽  
Wei Hong
Keyword(s):  
Output Power ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
High Output

scholarly journals Performance of Efficient CMOS Power Amplifier for ISM Band Applications

2019 ◽  
Vol 9 (2) ◽  
pp. 4579-4584
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
State Of The Art ◽  
Low Noise ◽  
High Output Power ◽  
Ism Band ◽  
Functional Blocks ◽  
Noise Amplifier ◽  
High Output

Power amplifiers are one of the most important functional blocks in the Radio Frequency (RF) frontend for reliable wireless communications. The power amplifiers amplify and boost the input signal to needed output power. The signal is amplified to create it sufficiently high for the transmitter to propagate the needed distance to the receiver. Such as power amplifiers are expected to need low-power communication while producing a relatively high output power with more efficiency. The trans-receiver has various blocks such as filters, Voltage Control Oscillator (VCO), Low Noise Amplifier (LNA) and power amplifier. Among these, the most power hungry device is a power amplifier. The efficiency of the power amplifier can be 100%, but practically it is just 55%. So, the scope of improvement in efficiency in a power amplifier will be an interesting and most challenging task. As well defined architecture, including linear functional block synthesis, which is complex in designing CMOS power amplifier for different applications. This article describes the different state-of-the-art design biasing class and advanced RF CMOS power amplifier for Industrial, Scientific, and Medical (ISM) band applications.

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