High output power 243 GHz voltage controlled oscillator in a 130 nm SiGe BiCMOS process

2018 ◽  
Vol 54 (6) ◽  
pp. 348-350 ◽  
Author(s):  
Peigen Zhou ◽  
Jixin Chen ◽  
Pinpin Yan ◽  
Debin Hou ◽  
Wei Hong
Keyword(s):  
Output Power ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
High Output

A Ku-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology

2016 ◽  
Vol 25 (06) ◽  
pp. 1650053 ◽  
Author(s):  
Jincan Zhang ◽  
Yuming Zhang ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
Bo Liu ◽  
...  
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Oscillation Frequency ◽  
Heterojunction Bipolar Transistor ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Fully Integrated ◽  
Low Phase Noise ◽  
High Output ◽  
Ku Band

In this paper, a fully integrated Ku-band voltage controlled oscillator (VCO) with low phase noise is presented in a GaAs heterojunction bipolar transistor (HBT) technology. A cross-coupled configuration is employed to achieve low phase noise, and to achieve high output power, the largest HBT and higher bias current are adopted. The implemented VCO demonstrates that the oscillation frequency is from 13.77[Formula: see text]GHz to 14.8[Formula: see text]GHz, with a maximum 4.83[Formula: see text]dBm output power at 13.77[Formula: see text]GHz. The phase noise of the VCO is [Formula: see text]100.2[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset from 14.36[Formula: see text]GHz oscillation frequency. The VCO consumes 61.2[Formula: see text]mW from 6[Formula: see text]V supply and occupies an area of 0.51[Formula: see text]mm[Formula: see text][Formula: see text]mm. Finally, the figure-of-merits (FOMs) for VCOs are discussed.

CMOS Active Inductor/Resonator Based Voltage Controlled Oscillator

2019 ◽  
Vol 12 (6) ◽  
pp. 500-506 ◽  
Author(s):  
Dhara P. Patel ◽  
Shruti Oza-Rahurkar
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Output Signal ◽  
Active Inductor ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Tank Circuit ◽  
Chip Area ◽  
Lc Resonator ◽  
High Output

Background: A tunable CMOS active inductor/resonator based Voltage Controlled Oscillator (VCO) has been presented. In the design of LC-VCO, LC resonator (tank) circuit has been substituted with gyrator based CMOS active inductor/resonator. The purity of VCO output signal is defined by the phase noise parameter. Methods: For good spectral purity of VCO output signal, the phase noise should be minimum. Moreover, the quality factor of LC resonator is inversely proportional to the phase noise of VCO output signal. In the presented work, a high-quality active inductor/resonator circuit has been used to design VCO which minimizes the phase noise and chip area as well. Further, other VCO characterization factors are measured. Results: The designed circuit has been implemented in 0.18µm CMOS technology. Conclusion: The design of the proposed AI based voltage controlled oscillator shows better phase noise, less chip area and high output power. The high output power is achieved at the cost of limited tuning range of 1.14 GHz ~ 2.1 GHz. The presented active inductor based voltage controlled oscillator can be used for RF applications from 1.14GHz ~ 2.1GHz.

A 67 GHz GaN Voltage-Controlled Oscillator MMIC With High Output Power

2013 ◽  
Vol 23 (7) ◽  
pp. 374-376 ◽  
Author(s):  
Rainer Weber ◽  
Dirk Schwantuschke ◽  
Peter Bruckner ◽  
Rudiger Quay ◽  
Micheal Mikulla ◽  
...  
Keyword(s):  
Output Power ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
High Output

scholarly journals Low phase‐noise high output power 176‐GHz voltage‐controlled oscillator in a 130‐nm BiCMOS technology

2019 ◽  
Vol 13 (14) ◽  
pp. 2490-2494 ◽  
Author(s):  
Habeeb Bello ◽  
Leonardo Pantoli ◽  
Herman Jalli Ng ◽  
Dietmar Kissinger ◽  
Giorgio Leuzzi
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Bicmos Technology ◽  
Low Phase Noise ◽  
High Output
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