An S-band left-handed tunable phase shifter based on BST thin film

2014 ◽  
Author(s):  
Lei-Qiang Ma ◽  
Fan-Yi Meng ◽  
Xiao-Xin Liu ◽  
Peng-Yuan Wang
Keyword(s):  
Thin Film ◽  
Phase Shifter ◽  
Left Handed ◽  
Bst Thin Film

X-band Left Handed Phase Shifter using Thin Film Ba0.25SR0.75TiO3 Ferroelectric Varactors

2006 ◽  
Author(s):  
Dan Kuylenstierna ◽  
Eric Ash ◽  
Andrei Vorobiev ◽  
Tatsuo Itoh ◽  
Spartak Gevorgian
Keyword(s):  
Thin Film ◽  
Phase Shifter ◽  
Left Handed ◽  
X Band ◽  
Ferroelectric Varactors

scholarly journals Enhancement of Photon Absorption onBaxSr1-xTiO3Thin-Film Semiconductor Using Photonic Crystal

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Abd. Wahidin Nuayi ◽  
Husin Alatas ◽  
Irzaman S. Husein ◽  
Mamat Rahmat
Keyword(s):  
Thin Film ◽  
Photonic Crystal ◽  
Mole Fraction ◽  
Visible Spectrum ◽  
Transparent Conductive Oxide ◽  
Photon Absorption ◽  
Film Properties ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Bst Thin Film

Enhancement of photon absorption on barium strontium titanate (BaxSr1-xTiO3) thin-film semiconductor for mole fractionx=0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500°C for 15 hours with increasing rate of 1.6°C/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33% for the respective mole fraction and demonstrating absorbance characteristic with flat feature. In addition, we also discuss the thin-film properties of attenuation constant and electrical conductivity.

Low loss edge-coupling thin-film lithium niobatemodulator with efficient thermal-optic phase shifter

2021 ◽  
Author(s):  
pan ying ◽  
Heyun Tan ◽  
Junwei Zhang ◽  
mingbo he ◽  
Mengyue Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Shifter ◽  
Low Loss ◽  
Thermal Optic

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

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