Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVD

2002 ◽  
Vol 12 (4) ◽  
pp. 45-50
Author(s):  
K. Woo
Keyword(s):  
Thin Film ◽  
Design Synthesis ◽  
Bst Thin Film

scholarly journals Enhancement of Photon Absorption onBaxSr1-xTiO3Thin-Film Semiconductor Using Photonic Crystal

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Abd. Wahidin Nuayi ◽  
Husin Alatas ◽  
Irzaman S. Husein ◽  
Mamat Rahmat
Keyword(s):  
Thin Film ◽  
Photonic Crystal ◽  
Mole Fraction ◽  
Visible Spectrum ◽  
Transparent Conductive Oxide ◽  
Photon Absorption ◽  
Film Properties ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Bst Thin Film

Enhancement of photon absorption on barium strontium titanate (BaxSr1-xTiO3) thin-film semiconductor for mole fractionx=0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500°C for 15 hours with increasing rate of 1.6°C/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33% for the respective mole fraction and demonstrating absorbance characteristic with flat feature. In addition, we also discuss the thin-film properties of attenuation constant and electrical conductivity.

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Design of Tunable Band-pass Filters and Phase Shifters Using BST Thin Film

2002 ◽  
Author(s):  
Ki-Byoung Kim ◽  
Tae-Soon Yun ◽  
Il-Doo Kim ◽  
Mi-Hwa Lim ◽  
Ho-Gi Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Shifters ◽  
Bst Thin Film ◽  
Band Pass

scholarly journals Application of Ferroelectric BST Thin Film Prepared by MOD for Uncooled Infrared Sensor of Dielectric Bolometer Mode

2000 ◽  
Vol 120 (12) ◽  
pp. 554-558 ◽  
Author(s):  
Hong Zhu ◽  
Minoru Noda ◽  
Tomonori Mukaigawa ◽  
Huaping Xu ◽  
Kazuhiko Hashimoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Infrared Sensor ◽  
Bst Thin Film

Tunable Lumped Element Filters With BST Thin-Film Varactors

2008 ◽  
Author(s):  
Errikos Lourandakis ◽  
Matthias Schmidt ◽  
Stefan Seitz ◽  
Robert Weigel
Keyword(s):  
Thin Film ◽  
Lumped Element ◽  
Bst Thin Film

Thin film field-effect transistors of 2,6-diphenyl anthracene (DPA)

2015 ◽  
Vol 51 (59) ◽  
pp. 11777-11779 ◽  
Author(s):  
Jie Liu ◽  
Huanli Dong ◽  
Zongrui Wang ◽  
Deyang Ji ◽  
Changli Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
Design Synthesis

The present work showed the design, synthesis and characterization of a high performance anthracene-based semiconductor.

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