De-noising Filters for TEM (Transmission Electron Microscopy) Image of Nanomaterials

2012 ◽  
Author(s):  
Himmat S. Kushwaha ◽  
Sanju Tanwar ◽  
K.S. Rathore ◽  
Sumit Srivastava
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron Microscopy Image ◽  
Electron Microscopy Image ◽  
Transmission Electron ◽  
Microscopy Image ◽  
Tem Transmission Electron Microscopy

Calculation and Analysis of Multifractal Spectrum of Sinter Surface

2013 ◽  
Vol 750-752 ◽  
pp. 2267-2270
Author(s):  
Zhi Min Cui ◽  
Rong Li Sang ◽  
Yuan Liang Li ◽  
Qing Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pore Structure ◽  
Multifractal Spectrum ◽  
Transmission Electron Microscopy Image ◽  
Structure Change ◽  
Electron Microscopy Image ◽  
Transmission Electron ◽  
Microscopy Image ◽  
Fractal Spectrum

Multifractal spectrums of sinter with different alkalinity were analyzed by multifractal software. The results show that sinter pore structure change from uniform to non-uniform with the improvement of alkalinity, Δα increases from 0.53 to 0.55. The structure of sinter pore is mainly microscopic by competition between macropores and micropores, Δf changes from 0.14 to-0.44. The distribution of sinter pores is quantitatively characterized by multi-fractal spectrum, which is consistent with transmission electron microscopy image.

Recent Developments in TEM Applications for the IC Industry

2008 ◽  
Author(s):  
L. F. Fu ◽  
Y. C. Wang ◽  
B. Jiang ◽  
F. Shen ◽  
M. Strauss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gate Oxide ◽  
Transmission Electron Microscopy Image ◽  
New Developments ◽  
Electron Microscopy Image ◽  
Transmission Electron ◽  
Microscopy Image ◽  
Recent Developments ◽  
Aberration Corrected

Abstract Recent developments in aberration-corrected transmission electron microscopy have drawn much attention from the semiconductor characterization community. Two new developments in transmission electron microscopy, image aberration correctors and probe aberration correctors, are discussed in term of their applications in characterizing gate oxide dielectrics for the IC industry.

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