scholarly journals Physically Based Analytical Model of Heavily Doped Silicon Wafers Based Proposed Solar Cell Microstructure

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 138898-138906
Author(s):  
Marwa S. Salem ◽  
Abdullah J. Alzahrani ◽  
Rabie A. Ramadan ◽  
Adwan Alanazi ◽  
Ahmed Shaker ◽  
...  
Keyword(s):  
Solar Cell ◽  
Analytical Model ◽  
Silicon Wafers ◽  
Doped Silicon ◽  
Physically Based ◽  
Heavily Doped

Performance enhancement of a proposed solar cell microstructure based on heavily doped silicon wafers

2019 ◽  
Vol 34 (3) ◽  
pp. 035012 ◽  
Author(s):  
Marwa S Salem ◽  
A Zekry ◽  
A Shaker ◽  
M Abouelatta ◽  
Tarek M Abdolkader
Keyword(s):  
Solar Cell ◽  
Performance Enhancement ◽  
Silicon Wafers ◽  
Doped Silicon ◽  
Heavily Doped

scholarly journals Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry

AIP Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 035118
Author(s):  
Qian Wang ◽  
Weiguo Liu ◽  
Lei Gong ◽  
Liguo Wang ◽  
Yaqing Li
Keyword(s):  
Doping Concentration ◽  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Doped Silicon ◽  
Heavily Doped

Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers

1983 ◽  
Vol 22 (Part 2, No. 1) ◽  
pp. L16-L18 ◽  
Author(s):  
Hideki Tsuya ◽  
Yojiro Kondo ◽  
Masaru Kanamori
Keyword(s):  
Silicon Wafers ◽  
Thermally Induced ◽  
Doped Silicon ◽  
Heavily Doped

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells
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