scholarly journals Ungrounded Coplanar Waveguide Based Straight Line Methods for Broadband and Continuous Dielectric Characterization of Microwave Substrates

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 32624-32631 ◽  
Author(s):  
Longzhu Cai ◽  
Zhi Hao Jiang ◽  
Yan Huang ◽  
Wei Hong
Keyword(s):  
Coplanar Waveguide ◽  
Dielectric Characterization ◽  
Straight Line

Modified approach for high frequency dielectric characterization of thinly metallized soft polymer film using grounded coplanar waveguide

2015 ◽  
Vol 107 (9) ◽  
pp. 092904 ◽  
Author(s):  
Samuel Baron ◽  
Kevin Nadaud ◽  
Benoit Guiffard ◽  
Ala Sharaiha ◽  
Laurence Seveyrat
Keyword(s):  
Polymer Film ◽  
High Frequency ◽  
Coplanar Waveguide ◽  
Dielectric Characterization ◽  
Soft Polymer

Microwave dielectric characterization of bulk ferroelectrics

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-113-Pr9-116 ◽  
Author(s):  
C. M. Weil ◽  
R. G. Geyer ◽  
L. Sengupta
Keyword(s):  
Dielectric Characterization ◽  
Microwave Dielectric

A Novel Cesaro Fractal EBG-based Sensing Platform for Dielectric Characterization of Liquids

2020 ◽  
pp. 1-1
Author(s):  
Ali Arif ◽  
Amna Zubair ◽  
Kashif Riaz ◽  
Muhammad Qasim Mehmood ◽  
Muhammad Zubair
Keyword(s):  
Dielectric Characterization ◽  
Sensing Platform

scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

Single-Frequency Amplitude-Modulation Sensor for Dielectric Characterization of Solids and Microfluidics

2021 ◽  
pp. 1-1
Author(s):  
Paris Velez ◽  
Jonathan Munoz-Enano ◽  
Amir Ebrahimi ◽  
Cristian Herrojo ◽  
Ferran Paredes ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Single Frequency ◽  
Dielectric Characterization
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