scholarly journals Modeling Electrical Switching Behavior of Carbon Resistive Memory

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 8735-8742
Author(s):  
Qiao-Feng Ou ◽  
Lei Wang ◽  
Bang-Shu Xiong
Keyword(s):  
Switching Behavior ◽  
Resistive Memory ◽  
Electrical Switching

scholarly journals Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14662-14669
Author(s):  
Hongyan Zhang ◽  
Xiaofeng Zhao ◽  
Jiahe Huang ◽  
Ju Bai ◽  
Yanjun Hou ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Access Memory ◽  
Electrical Switching ◽  
Active Layers ◽  
Oxide Nanoparticle

The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior.

Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory

2011 ◽  
Vol 1337 ◽  
Author(s):  
B.D. Briggs ◽  
S.M. Bishop ◽  
K.D. Leedy ◽  
B. Butcher ◽  
R. L. Moore ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Copper Concentration ◽  
Atomic Layer ◽  
Metal Electrode ◽  
Pulse Mode ◽  
Switching Behavior ◽  
Material Structure ◽  
Memory Devices ◽  
Resistive Memory

ABSTRACTHafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfOx active layers in these devices were deposited by atomic layer deposition at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O2 plasma as the reactant. Depth profiles of the HfOx by x-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfOx film. This phenomenon has not been previously reported in resistive switching literature and therefore may have gone unnoticed by other investigators. The MIM structures fabricated from the HfOx exhibited non-polar behavior, independent of the top metal electrode (Ni, Pt, Al, Au). These results are analogous to the non-polar switching behavior observed by Yang et al. [2] for intentionally Cu-doped HfOx resistive memory devices. The distinguishing characteristic of the material structure produced in this research is that the copper concentration increases to 60 % in a conducting surface copper oxide layer ~20 nm thick. Lastly, the results from both sweep- and pulse-mode current-voltage measurements are presented and preliminary work on fabricating sub-100 nm devices is summarized.

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

Electrical switching properties and structural characteristics of GeSe–GeTe films

Nanoscale ◽  
2019 ◽  
Vol 11 (4) ◽  
pp. 1595-1603 ◽  
Author(s):  
Kun Ren ◽  
Min Zhu ◽  
Wenxiong Song ◽  
Shilong Lv ◽  
Mengjiao Xia ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Switching Behavior ◽  
Structural Motifs ◽  
Electrical Switching

The local structural motifs in GeSe–GeTe have been determined, which is essential to understand its thermal and electrical switching behavior.

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

Synthesis of Resistive Memory Oxides by Ion Implantation

2012 ◽  
Vol 1430 ◽  
Author(s):  
S.M. Bishop ◽  
Z.P. Rice ◽  
B.D. Briggs ◽  
H. Bakhru ◽  
N.C. Cady
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Tantalum Oxide ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Bipolar Resistive Switching ◽  
Technology Scaling ◽  
Oxygen Implantation ◽  
Current Voltage ◽  
The Difference

ABSTRACTIn this work, we report on the use ion of implantation to synthesize resistive memory oxides. The surface of copper thin films was converted to copper oxide using oxygen implantation. Devices fabricated from the copper oxide (CuxO) layers exhibited unipolar switching behavior without the need for a forming voltage. Technology scaling was demonstrated by oxygen implanting copper damascene vias. Unipolar switching was observed in via-based devices down to 48 nm. The current-voltage data of devices scaled from 100 μm to 48 nm suggests that the RESET transition is related to localized Joule heating. Tantalum oxide (TaxOy) was also created by oxygen implantation but exhibited bipolar resistive switching. Analysis of the conduction suggests that the difference between the two resistance states in these devices is largely due to a lowering of the Pt-TaxOy Schottky barrier.

Electrical switching behavior of bulk AgI-Ag 2 O-MoO 3 glass with ON-state current and thickness

2018 ◽  
Vol 5 (1) ◽  
pp. 2705-2709 ◽  
Author(s):  
B. Tanujit ◽  
G. Sreevidya Varma ◽  
K. Rajanna ◽  
S. Asokan
Keyword(s):  
Switching Behavior ◽  
Electrical Switching
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