scholarly journals Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14662-14669
Author(s):  
Hongyan Zhang ◽  
Xiaofeng Zhao ◽  
Jiahe Huang ◽  
Ju Bai ◽  
Yanjun Hou ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Access Memory ◽  
Electrical Switching ◽  
Active Layers ◽  
Oxide Nanoparticle

The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals Surface effects of electrode-dependent switching behavior of resistive random-access memory

2016 ◽  
Vol 109 (13) ◽  
pp. 131603 ◽  
Author(s):  
Jr-Jian Ke ◽  
Tzu-Chiao Wei ◽  
Dung-Sheng Tsai ◽  
Chun-Ho Lin ◽  
Jr-Hau He
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Surface Effects ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory

scholarly journals Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

Materials ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 7191-7198 ◽  
Author(s):  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Te-Kung Chiang ◽  
Yeong-Her Wang
Keyword(s):  
Strontium Titanate ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory
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