scholarly journals Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 28592-28596 ◽  
Author(s):  
Junjie An ◽  
Shengdong Hu
Keyword(s):  
Switching Loss ◽  
Heterojunction Diode ◽  
Recovery Characteristic

Estimation of Switching Loss and Voltage Overshoot of Active Gate Driver by Neural Network

2020 ◽  
Vol E103.C (11) ◽  
pp. 609-612
Author(s):  
Satomu YASUDA ◽  
Yukihisa SUZUKI ◽  
Keiji WADA
Keyword(s):  
Neural Network ◽  
Switching Loss ◽  
Gate Driver

Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V

2020 ◽  
Vol 67 (12) ◽  
pp. 5628-5632
Author(s):  
Zhuangzhuang Hu ◽  
Jianguo Li ◽  
Chunyong Zhao ◽  
Zhaoqing Feng ◽  
Xusheng Tian ◽  
...  
Keyword(s):  
Heterojunction Diode ◽  
Blocking Voltage ◽  
Reverse Blocking

scholarly journals 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3554
Author(s):  
Jaeyeop Na ◽  
Jinhee Cheon ◽  
Kwangsoo Kim
Keyword(s):  
Dynamic Characteristics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Switching Loss ◽  
Switching Speed ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

scholarly journals Hybrid DC-DC Converter with Low Switching Loss, Low Primary Current and Wide Voltage Operation

Energies ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2536
Author(s):  
Bor-Ren Lin ◽  
Yi-Kuan Lin
Keyword(s):  
Pulse Width ◽  
Pulse Width Modulation ◽  
Input Voltage ◽  
Resonant Circuit ◽  
Switching Loss ◽  
Voltage Range ◽  
Current Loss ◽  
Zero Voltage Switching ◽  
Energy Applications ◽  
Multi Stage

A full-bridge converter with an additional resonant circuit and variable secondary turns is presented and achieved to have soft-switching operation on active devices, wide voltage input operation and low freewheeling current loss. The resonant tank is linked to the lagging-leg of the full bridge pulse-width modulation converter to realize zero-voltage switching (ZVS) characteristic on the power switches. Therefore, the wide ZVS operation can be accomplished in the presented circuit over the whole input voltage range and output load. To overcome the wide voltage variation on renewable energy applications such as DC wind power and solar power conversion, two winding sets are used on the output-side of the proposed converter to obtain the different voltage gains. Therefore, the wide voltage input from 90 to 450 V (Vin,max = 5Vin,min) is implemented in the presented circuit. To further improve the freewheeling current loss issue in the conventional phase-shift pulse-width modulation converter, an auxiliary DC voltage generated from the resonant circuit is adopted to reduce this freewheeling current loss. Compared to the multi-stage DC converters with wide input voltage range operation, the proposed circuit has a low freewheeling current loss, low switching loss and a simple control algorithm. The studied circuit is tested and the experimental results are demonstrated to testify the performance of the resented circuit.

Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors

2021 ◽  
Vol 130 (5) ◽  
pp. 055302
Author(s):  
B. S. Chaudhari ◽  
H. Goto ◽  
M. Niraula ◽  
K. Yasuda
Keyword(s):  
Heterojunction Diode ◽  
X Ray ◽  
Dark Currents
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