Controlled solder interdiffusion for high power semiconductor laser diode die bonding

1997 ◽  
Vol 20 (2) ◽  
pp. 141-145 ◽  
Author(s):  
S.A. Merritt ◽  
P.J.S. Heim ◽  
Si Hyung Cho ◽  
M. Dagenais
Keyword(s):  
Semiconductor Laser ◽  
Laser Diode ◽  
High Power ◽  
Power Semiconductor ◽  
Semiconductor Laser Diode ◽  
Die Bonding

scholarly journals Design of Pulse Power Supply for High-Power Semiconductor Laser Diode Arrays

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 92805-92812 ◽  
Author(s):  
Qinglin Zhao ◽  
Shu Li ◽  
Ruru Cao ◽  
Deyu Wang ◽  
Jing Yuan
Keyword(s):  
Semiconductor Laser ◽  
Laser Diode ◽  
High Power ◽  
Power Supply ◽  
Pulse Power ◽  
Pulse Power Supply ◽  
Power Semiconductor ◽  
Semiconductor Laser Diode ◽  
Laser Diode Arrays

scholarly journals Real-time Thermographic Methodology with High-accuracy Temperature Monitoring Applied to Stacked Package of High-power Semiconductor Laser Diode

2019 ◽  
Vol 31 (7) ◽  
pp. 2183
Author(s):  
Shun-Lung Yen ◽  
Shiang-Feng Tang ◽  
Chung-Wei Ou ◽  
Chin-Jung Chao ◽  
Hsin-Yen Cheng ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Real Time ◽  
Laser Diode ◽  
High Power ◽  
High Accuracy ◽  
Temperature Monitoring ◽  
Power Semiconductor ◽  
Semiconductor Laser Diode

scholarly journals A novel high-power semiconductor laser diode with large cavity for high efficiency coupling with the optical fibers

2007 ◽  
Vol 56 (7) ◽  
pp. 3945
Author(s):  
Yu Hai-Ying ◽  
Cui Bi-Feng ◽  
Chen Yi-Xin ◽  
Zou De-Shu ◽  
Liu Ying ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Optical Fibers ◽  
Laser Diode ◽  
High Power ◽  
High Efficiency ◽  
Large Cavity ◽  
Power Semiconductor ◽  
Semiconductor Laser Diode

Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste

2012 ◽  
Vol 134 (4) ◽  
Author(s):  
Yi Yan ◽  
Xu Chen ◽  
Xingsheng Liu ◽  
Yunhui Mei ◽  
Guo-Quan Lu
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Near Field ◽  
Laser Diodes ◽  
Acoustic Microscopy ◽  
High Power Laser ◽  
Power Laser ◽  
Power Semiconductor ◽  
Die Bonding ◽  
Nanosilver Paste

Conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. For these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. In this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 W 808 nm high power laser diodes. The properties of the laser diodes operating in the continuous wave (CW) mode, including the characteristics of power–current–voltage (LIV), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. In addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 W 808 nm high power semiconductor laser with nanosilver paste. Thermal analyses of the laser diodes operating at CW mode with different die-attached materials, indium solder, gold–tin solder and nanosilver paste, were conducted by finite element analysis (FEA). According to the result of the FEA, the nanosilver paste resulted in the lowest temperature in the laser diodes. The test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser.

A high-power tapered and cascaded active multimode interferometer semiconductor laser diode

2011 ◽  
Vol 32 (5) ◽  
pp. 054007 ◽  
Author(s):  
Weijiang Lai ◽  
Yuanbing Cheng ◽  
Chen Yao ◽  
Daibing Zhou ◽  
Jing Bian ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Laser Diode ◽  
High Power ◽  
Semiconductor Laser Diode
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