The development of component-level thermal compact models of a C4/CBGA interconnect technology: the Motorola PowerPC 603 and PowerPC 604 RISC microprocessors

1998 ◽  
Vol 21 (1) ◽  
pp. 104-112 ◽  
Author(s):  
J. Parry ◽  
H. Rosten ◽  
G.B. Kromann
Keyword(s):  
Component Level ◽  
Compact Models ◽  
Interconnect Technology

Dual Damascene Process for FatWires in Copper/FSG Technology

2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  
Keyword(s):  
Line Width ◽  
Lower Cost ◽  
Process Window ◽  
Cmos Process ◽  
Dual Damascene ◽  
Damascene Process ◽  
Interconnect Technology

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

Dynamic Infrared System Level Fault Isolation

2003 ◽  
Author(s):  
John A. Naoum ◽  
Johan Rahardjo ◽  
Yitages Taffese ◽  
Marie Chagny ◽  
Jeff Birdsley ◽  
...  
Keyword(s):  
Fault Isolation ◽  
System Level ◽  
System Component ◽  
Component Level ◽  
Ir Imaging ◽  
Non Destructive

Abstract The use of Dynamic Infrared (IR) Imaging is presented as a novel, valuable and non-destructive approach for the analysis and isolation of failures at a system/component level.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

Cloud-integrated wireless-optical broadband access network with survivability

2020 ◽  
Vol 10 ◽  
Author(s):  
Sangita Solanki ◽  
Raksha Upadhyay ◽  
Uma Rathore Bhatt
Keyword(s):  
Access Network ◽  
Access Networks ◽  
Manhattan Distance ◽  
Broadband Access ◽  
Optical Access Networks ◽  
Component Level ◽  
Backup Path ◽  
Wireless Router ◽  
Path Computation ◽  
Broadband Access Network

Cloud-integrated wireless optical broadband (CIW) access networks inheriting advantages of cloud computing, wireless and optical access networks have a broad prospect in the future. Due to failure of components like OLT level, ONU level, link or path failure and cloud component level in CIW, survivability is becoming one of the important issues. In this paper, we have presented cloud-integrated wireless-optical broadband access network with survivability using integer linear programming (ILP) model, to minimize the number of cloud components while providing maximum backup paths. Hence, we have proposed protection through cloud-integrated wireless router to available ONUs (PCIWRAO). So, evaluated the backup path computation. We have considered ONU level failure in which the affected traffic is transferred through wireless routers and cloud component to the available ONUs using Manhattan distance algorithm. Simulation results show different configurations for different number of routers and cloud components illustrating available backup path when ONU fails.

scholarly journals Development of a Component-Level Hydrogen Transport Model with OpenFOAM and Application to Tritium Transport Inside a DEMO HCPB Breeder

2021 ◽  
Vol 11 (8) ◽  
pp. 3481
Author(s):  
Volker Pasler ◽  
Frederik Arbeiter ◽  
Christine Klein ◽  
Dmitry Klimenko ◽  
Georg Schlindwein ◽  
...  
Keyword(s):  
Transport Model ◽  
Tritium Concentration ◽  
Minor Role ◽  
Specific Rate ◽  
Component Level ◽  
Diffusion Limited ◽  
Purge Gas ◽  
Choice Of Species ◽  
The Impact ◽  
Tritium Transport

This work continues the development of a numerical model to simulate transient tritium transport on the breeder zone (BZ) level for the EU helium-cooled pebble bed (HCPB) concept for DEMO. The basis of the model is the open-source field operation and manipulation framework, OpenFOAM. The key output quantities of the model are the tritium concentration in the purge gas and in the coolant and the tritium inventory inside the BZ structure. New model features are briefly summarized. As a first relevant application a simulation of tritium transport for a single pin out of the KIT HCPB design for DEMO is presented. A variety of scenarios investigates the impact of the permeation regime (diffusion-limited vs. surface-limited), of an additional hydrogen content of 300 Pa H2 in the purge gas, of the released species (HT vs. T2), and of the choice of species-specific rate constants (recombination constant of HT set twice as for H2 and T2). The results indicate that the released species plays a minor role for permeation. Both permeation and inventory show a considerable dependence on a possible hydrogen addition in the purge gas. An enhanced HT recombination constant reduces steel T inventories and, in the diffusion-limited case, also permeation significantly. Scenarios with 80 bar vs. 2 bar purge gas pressure indicate that purge gas volumetric flow is decisive for permeation.

scholarly journals Characteristic Cohomology I: Singularities of Given Type

2020 ◽  
Author(s):  
James Damon
Keyword(s):  
Geometric Criterion ◽  
Milnor Fiber ◽  
Compact Models ◽  
Singular Matrices

Abstract For a germ of a variety $\mathcal{V}, 0 \subset \mathbb C^N, 0$, a singularity $\mathcal{V}_0$ of ‘type $\mathcal{V}$’ is given by a germ $f_0 : \mathbb C^n, 0 \to \mathbb C^N, 0$ which is transverse to $\mathcal{V}$ in an appropriate sense so that $\mathcal{V}_0 = f_0^{\,-1}(\mathcal{V})$. If $\mathcal{V}$ is a hypersurface germ, then so is $\mathcal{V}_0 $, and by transversality ${\operatorname{codim}}_{\mathbb C} {\operatorname{sing}}(\mathcal{V}_0) = {\operatorname{codim}}_{\mathbb C} {\operatorname{sing}}(\mathcal{V})$ provided $n > {\operatorname{codim}}_{\mathbb C} {\operatorname{sing}}(\mathcal{V})$. So $\mathcal{V}_0, 0$ will exhibit singularities of $\mathcal{V}$ up to codimension n. For singularities $\mathcal{V}_0, 0$ of type $\mathcal{V}$, we introduce a method to capture the contribution of the topology of $\mathcal{V}$ to that of $\mathcal{V}_0$. It is via the ‘characteristic cohomology’ of the Milnor fiber (for $\mathcal{V}, 0$ a hypersurface), and complement and link of $\mathcal{V}_0$ (in the general case). The characteristic cohomology of the Milnor fiber $\mathcal{A}_{\mathcal{V}}(\,f_0; R)$, and respectively of the complement $\mathcal{C}_{\mathcal{V}}(\,f_0; R)$, are subalgebras of the cohomology of the Milnor fibers, respectively the complement, with coefficients R in the corresponding cohomology. For a fixed $\mathcal{V}$, they are functorial over the category of singularities of type $\mathcal{V}$. In addition, for the link of $\mathcal{V}_0$ there is a characteristic cohomology subgroup $\mathcal{B}_{\mathcal{V}}(\,f_0, \mathbf{k})$ of the cohomology of the link over a field $\mathbf{k}$ of characteristic 0. The cohomologies $\mathcal{C}_{\mathcal{V}}(\,f_0; R)$ and $\mathcal{B}_{\mathcal{V}}(\,f_0, \mathbf{k})$ are shown to be invariant under the $\mathcal{K}_{\mathcal{V}}$-equivalence of defining germs f0, and likewise $\mathcal{A}_{\mathcal{V}}(\,f_0; R)$ is shown to be invariant under the $\mathcal{K}_{H}$-equivalence of f0 for H the defining equation of $\mathcal{V}, 0$. We give a geometric criterion involving ‘vanishing compact models’ for both the Milnor fibers and complements which detect non-vanishing subalgebras of the characteristic cohomologies, and subgroups of the characteristic cohomology of the link. Also, we consider how in the hypersurface case the cohomology of the Milnor fiber is a module over the characteristic cohomology $\mathcal{A}_{\mathcal{V}}(\,f_0; R)$. We briefly consider the application of these results to a number of cases of singularities of a given type. In part II, we specialize to the case of matrix singularities and using results on the topology of the Milnor fibers, complements and links of the varieties of singular matrices obtained in another paper allow us to give precise results for the characteristic cohomology of all three types.

Sign in / Sign up

Export Citation Format

Share Document