Evaluation of size effect on mechanical properties of single crystal silicon by nanoscale bending test using AFM

2000 ◽  
Vol 9 (4) ◽  
pp. 450-459 ◽  
Author(s):  
T. Namazu ◽  
Y. Isono ◽  
T. Tanaka
Keyword(s):  
Mechanical Properties ◽  
Size Effect ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bending Test ◽  
Crystal Silicon

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

Residual Area Max Depth Model for Nanoindentation Hardness Size Effect of Single Crystal Silicon

2007 ◽  
Vol 339 ◽  
pp. 389-394
Author(s):  
L. Zhou ◽  
Ying Xue Yao ◽  
Shahjada Ahmed Pahlovy
Keyword(s):  
Size Effect ◽  
Single Crystal ◽  
Indentation Size Effect ◽  
Peak Load ◽  
Single Crystal Silicon ◽  
Indentation Hardness ◽  
Indentation Size ◽  
Crystal Silicon ◽  
New Model ◽  
Nanoindentation Hardness

In material nanoindentation hardness testing, the hardness will decrease with the indentation depth or peak load increase, i.e. indentation size effect (ISE). There are several models and equations were proposed to describe ISE. But the variables self-inaccurate in these models and equations, it will affect the result trueness. Single crystal silicon was used for nanoindentation experiments, and max depths were obtained from these experiments. Combining Matlab software, residual areas were obtained by atomic force microscopy (AFM). Based on max depth and residual area, a new model—residual area max depth model was proposed for indentation size effect in nanoindentaion hardness. The new model perhaps can understand and describe ISE in indentation hardness better than other models and equations.

scholarly journals Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1060 ◽  
Author(s):  
Jiaqi Zhang ◽  
Yi Zhang ◽  
Dazheng Chen ◽  
Weidong Zhu ◽  
He Xi ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Single Crystal ◽  
Ohmic Contact ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Bending Test ◽  
Crystal Silicon ◽  
Silicon Nanomembrane ◽  
Tio2 Interlayer

Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.

Sign in / Sign up

Export Citation Format

Share Document