Sacrificial layer process with laser-driven release for batch assembly operations

1998 ◽  
Vol 7 (4) ◽  
pp. 416-422 ◽  
Author(s):  
A.S. Holmes ◽  
S.M. Saidam
Keyword(s):  
Sacrificial Layer ◽  
Assembly Operations ◽  
Batch Assembly

Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

2013 ◽  
Vol E96.C (5) ◽  
pp. 714-717
Author(s):  
Woo Young CHOI ◽  
Min Su HAN ◽  
Boram HAN ◽  
Dongsun SEO ◽  
Il Hwan CHO
Keyword(s):  
Nonvolatile Memory ◽  
Sacrificial Layer

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

1996 ◽  
Author(s):  
P. Perdu ◽  
G. Perez ◽  
M. Dupire ◽  
B. Benteo
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Carbon Coating ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Fault Analysis ◽  
Voltage Contrast ◽  
The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

scholarly journals High-yield fabrication of perpendicularly magnetised synthetic antiferromagnetic nanodiscs

Nano Research ◽  
2021 ◽  
Author(s):  
Emma N. Welbourne ◽  
Tarun Vemulkar ◽  
Russell P. Cowburn
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Sacrificial Layer ◽  
Nanosphere Lithography ◽  
High Yield ◽  
Perpendicular Anisotropy ◽  
Ion Milling ◽  
Lift Off

AbstractSynthetic antiferromagnetic (SAF) particles with perpendicular anisotropy display a number of desirable characteristics for applications in biological and other fluid environments. We present an efficient and effective method for the patterning of ultrathin Ruderman-Kittel-Kasuya-Yoshida coupled, perpendicularly magnetised SAFs using a combination of nanosphere lithography and ion milling. A Ge sacrificial layer is utilised, which provides a clean and simple lift-off process, as well as maintaining the key magnetic properties that are beneficial to target applications. We demonstrate that the method is capable of producing a particularly high yield of well-defined, thin film based nanoparticles.

scholarly journals A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 892
Author(s):  
Jicong Zhao ◽  
Zheng Zhu ◽  
Haiyan Sun ◽  
Shitao Lv ◽  
Xingyu Wang ◽  
...  
Keyword(s):  
Resonant Frequency ◽  
Lamb Wave ◽  
Piezoelectric Layer ◽  
Sacrificial Layer ◽  
High Quality ◽  
Micro Electro Mechanical Systems ◽  
Mems Fabrication ◽  
Thermal Oxide ◽  
Series Resonant ◽  
Releasing Process

This paper presents a micro-electro-mechanical systems (MEMS) processing technology for Aluminum Nitride (AlN) Lamb-wave resonators (LWRs). Two LWRs with different frequencies of 402.1 MHz and 2.097 GHz by varying the top interdigitated (IDT) periods were designed and fabricated. To avoid the shortcomings of the uncontrollable etching of inactive areas during the releasing process and to improve the fabrication yield, a thermal oxide layer was employed below the platted polysilicon sacrificial layer, which could define the miniaturized release cavities well. In addition, the bottom Mo electrode that was manufactured had a gentle inclination angle, which could contribute to the growth of the high-quality AlN piezoelectric layer above the Mo layer and effectively prevent the device from breaking. The measured results show that the IDT-floating resonators with 12 μm and 2 μm electrode periods exhibit a motional quality factor (Qm) as high as 4382 and 1633. The series resonant frequency (fs)·Qm values can reach as high as 1.76 × 1012 and 3.42 × 1012, respectively. Furthermore, Al is more suitable as the top IDT material of the AlN LWRs than Au, and can contribute to achieving an excellent electrical performances due to the smaller density, smaller thermo-elastic damping (TED), and larger acoustic impedance difference between Al and AlN.

scholarly journals PMMA sacrificial layer based reliable debonding of ultra-thin chips after lapping

2021 ◽  
pp. 111588
Author(s):  
Yogeenth Kumaresan ◽  
Sihang Ma ◽  
Ravinder Dahiya
Keyword(s):  
Sacrificial Layer

scholarly journals Toward clean suspended CVD graphene

RSC Advances ◽  
2016 ◽  
Vol 6 (87) ◽  
pp. 83954-83962 ◽  
Author(s):  
Alexander Yulaev ◽  
Guangjun Cheng ◽  
Angela R. Hight Walker ◽  
Ivan V. Vlassiouk ◽  
Alline Myers ◽  
...  
Keyword(s):  
Sacrificial Layer ◽  
Cvd Graphene ◽  
Graphene Transfer

Anthracene was proposed as a new easily evaporable sacrificial layer for a dry CVD graphene transfer.

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