scholarly journals A 1.5-V CMOS all-N-logic true-single-phase bootstrapped dynamic-logic circuit suitable for low supply voltage and high-speed pipelined system operation

1999 ◽  
Vol 46 (5) ◽  
pp. 628-631 ◽  
Author(s):  
J.H. Lou ◽  
J.B. Kuo
Keyword(s):  
High Speed ◽  
Single Phase ◽  
Supply Voltage ◽  
Dynamic Logic ◽  
Logic Circuit ◽  
System Operation ◽  
Low Supply Voltage

scholarly journals A Negative Charge Pump Using Enhanced Pumping Clock for Low-Voltage DRAM

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1769 ◽  
Author(s):  
Choongkeun Lee ◽  
Taegun Yim ◽  
Hongil Yoon
Keyword(s):  
High Speed ◽  
Negative Charge ◽  
Low Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Clock Generator ◽  
Area Overhead ◽  
Pumping Efficiency ◽  
Charge Pump Circuit ◽  
Low Supply Voltage

As the supply voltage decreases, there is a need for a high-speed negative charge pump circuit, for example, to produce the back-bias voltage (VBB) with high pumping efficiency at a low supply voltage (VDD). Beyond the basic negative charge pump circuit with the small area overhead, advanced schemes such as hybrid pump circuit (HCP) and cross-coupled hybrid pump circuits (CHPC) were introduced to improve the pumping efficiency and pump down speed. However, they still suffer from pumping efficiency degradation, low level |VBB|, and small pumping currents at very low VDD. A novel negative charge pump using an enhanced pumping clock is proposed. The proposed cross-coupled charge pump consists of the enhanced pumping clock generator (ECG) having a pair of inverters and PMOS latch circuit to produce an enhanced control signal with a greater amplitude, thereby working efficiently especially at low supply voltages. The proposed scheme is validated with a HSPICE simulation using the TSMC 180 nm process. The proposed scheme can be operated down to VDD = 0.4 V, and |VBB|/VDD is obtained to be 86.1% at VDD = 0.5 V and Cload = 20 nF. Compared to the state-of-the-art CHPC scheme, the pumping efficiency is larger by 35% at VDD = 0.6 V and RL = 10 KΩ, and the pumping current is 2.17 times greater at VDD = 1.2 V and VBB = 0 V, making the circuit suitable for very low supply voltage applications in DRAMs.

scholarly journals Comparative Analysis Domino Logic Based Techniques For VLSI Circuit

2014 ◽  
Vol 12 (8) ◽  
pp. 3803-3808 ◽  
Author(s):  
Shilpa Kamde ◽  
Jitesh Shinde ◽  
Sanjay Badjate ◽  
Pratik Hajare
Keyword(s):  
High Speed ◽  
High Performance ◽  
Circuit Simulation ◽  
Dynamic Logic ◽  
Digital Circuit ◽  
Logic Circuit ◽  
Vlsi Circuit ◽  
Short Channel ◽  
Domino Logic ◽  
Low Area

Domino logic is a CMOS-based evolution of the dynamic logic  techniques  based  on  either  PMOS  or  NMOS transistors. Domino logic technique is widely used in modern digital VLSI circuit. Dynamic logic is twice as fast as static CMOS logic because it uses only N fast transistors. The Dynamic (Domino) logic circuit are often favored in high performance designs because of the high speed and low area advantage.Four different dynamic circuit techniques including Basic domino logic circuit are compared in this paper for low power consumption and speed of domino logic circuits. For digital circuit simulation used BSIM(Berkeley Short Channel IGFET ) Model because it control leakage current.

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