Mutual coupling between metal strip antennas on finite size, electrically thick dielectric substrates

1993 ◽  
Vol 41 (1) ◽  
pp. 108-115 ◽  
Author(s):  
A.J. Parfitt ◽  
D.W. Griffin ◽  
P.H. Cole
Keyword(s):  
Mutual Coupling ◽  
Finite Size ◽  
Metal Strip ◽  
Dielectric Substrates

Mutual coupling in a linear dipole array of finite size

2005 ◽  
Vol 152 (5) ◽  
pp. 324 ◽  
Author(s):  
Y.P. Xi ◽  
D.G. Fang ◽  
Y.X. Sun ◽  
Y.L. Chow
Keyword(s):  
Mutual Coupling ◽  
Finite Size ◽  
Linear Dipole

The partial realization theory of finite size two-dimensional arrays

1981 ◽  
Vol 64 (10) ◽  
pp. 1-8
Author(s):  
Tsuyoshi Matsuo ◽  
Yasumichi Hasegawa ◽  
Yoshikuni Okada
Keyword(s):  
Finite Size ◽  
Two Dimensional ◽  
Realization Theory

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

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