Three simple methods to obtain large area thin films by pulsed laser deposition

2001 ◽  
Vol 11 (1) ◽  
pp. 3852-3855 ◽  
Author(s):  
A.S. Kuzanyan ◽  
G.R. Badalyan ◽  
V.R. Nikoghosyan ◽  
A.L. Gyulamiryan ◽  
A.M. Gulian
1999 ◽  
Vol 9 (2) ◽  
pp. 2359-2362 ◽  
Author(s):  
B. Schey ◽  
W. Bieel ◽  
M. Kuhn ◽  
B. Stritzker

1997 ◽  
Vol 7 (2) ◽  
pp. 1240-1243 ◽  
Author(s):  
M. Lorenz ◽  
H. Hochmuth ◽  
D. Natusch ◽  
H. Borner ◽  
T. Tharigen ◽  
...  

2001 ◽  
Vol 11 (1) ◽  
pp. 3859-3862 ◽  
Author(s):  
A.S. Kuzanyan ◽  
G.R. Badalyan ◽  
V.R. Nikoghosyan ◽  
S.R. Harutyunyan

2015 ◽  
Vol 120 ◽  
pp. 88-91 ◽  
Author(s):  
Elisabeth M. Preiß ◽  
Tobias Rogge ◽  
Andreas Krauß ◽  
Helmut Seidel

2012 ◽  
Vol 15 ◽  
pp. 170-178
Author(s):  
A.A. KUZANYAN ◽  
V.A. PETROSYAN ◽  
A.S. KUZANYAN

Several new methods of pulsed laser deposition for fabricating large-area thin films of uniform thickness and composition on a rotating substrate and onto a moving ribbon are proposed. The peculiarities of the methods are the laser deposition of a compound upon a substrate through a diaphragm or the mask placed in immediate proximity of the substrate together with a use of more than one target. The proposed method makes it possible to obtain thin films of uniform thickness on substrates with sizes limited only by the deposition chamber size. Some of the methods are experimentally verified by depositing CuO thin films and the deviation of the film thickness from the average value does not exceed ±3%. Given the advantage of laser deposition, the offered methods should find practical use, in particular, in micro-electronics, optical industry, development of superconducting coated conductors, deposition of thin films of functional materials and other modern technologies.


1996 ◽  
Vol 433 ◽  
Author(s):  
A. Pignolet ◽  
C. Curran ◽  
S. Welke ◽  
S. Senz ◽  
M. Alexe ◽  
...  

AbstractThin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and SrBi2Ta2O9 have been epitaxially deposited by pulsed laser deposition (PLD) on SrTiO3 single crystal substrates. Bi4 Ti3O12 has been deposited as well on a CeO2JYSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi4Ti3O12 has also been deposited on a whole (100)-oriented 3”- Si wafer. The obtained films have a uniform thickness over a diameter greater than 50 mm, corresponding to an area of about 20 cm2. It is likely that homogeneous deposition on entire wafers of 3-inch in diameter will be accomplished in the near future. The composition, structure, and electrical properties of the films are presented.


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