Large-area and double-sided pulsed laser deposition of Y-Ba-Cu-O thin films applied to HTSC microwave devices

1997 ◽  
Vol 7 (2) ◽  
pp. 1240-1243 ◽  
Author(s):  
M. Lorenz ◽  
H. Hochmuth ◽  
D. Natusch ◽  
H. Borner ◽  
T. Tharigen ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Microwave Devices ◽  
Large Area

scholarly journals K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

2018 ◽  
Vol 53 (18) ◽  
pp. 13042-13052 ◽  
Author(s):  
B. Aspe ◽  
F. Cissé ◽  
X. Castel ◽  
V. Demange ◽  
S. Députier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Microwave Devices ◽  
Tunable Microwave

Large area pulsed laser deposition of YBCO thin films

1999 ◽  
Vol 9 (2) ◽  
pp. 2359-2362 ◽  
Author(s):  
B. Schey ◽  
W. Bieel ◽  
M. Kuhn ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area ◽  
Ybco Thin Films

Three simple methods to obtain large area thin films by pulsed laser deposition

2001 ◽  
Vol 11 (1) ◽  
pp. 3852-3855 ◽  
Author(s):  
A.S. Kuzanyan ◽  
G.R. Badalyan ◽  
V.R. Nikoghosyan ◽  
A.L. Gyulamiryan ◽  
A.M. Gulian
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area

Some peculiarities of pulsed laser deposition of large area thin films

2001 ◽  
Vol 11 (1) ◽  
pp. 3859-3862 ◽  
Author(s):  
A.S. Kuzanyan ◽  
G.R. Badalyan ◽  
V.R. Nikoghosyan ◽  
S.R. Harutyunyan
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area

scholarly journals Gas Sensing by SnO 2 Thin Films Prepared by Large-area Pulsed Laser Deposition

2015 ◽  
Vol 120 ◽  
pp. 88-91 ◽  
Author(s):  
Elisabeth M. Preiß ◽  
Tobias Rogge ◽  
Andreas Krauß ◽  
Helmut Seidel
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gas Sensing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area

METHODS FOR PULSED LASER DEPOSITION OF LARGE-AREA FILMS USING MORE THAN ONE TARGET

2012 ◽  
Vol 15 ◽  
pp. 170-178
Author(s):  
A.A. KUZANYAN ◽  
V.A. PETROSYAN ◽  
A.S. KUZANYAN
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Functional Materials ◽  
Coated Conductors ◽  
Laser Deposition ◽  
Uniform Thickness ◽  
Large Area ◽  
Average Value ◽  
Modern Technologies

Several new methods of pulsed laser deposition for fabricating large-area thin films of uniform thickness and composition on a rotating substrate and onto a moving ribbon are proposed. The peculiarities of the methods are the laser deposition of a compound upon a substrate through a diaphragm or the mask placed in immediate proximity of the substrate together with a use of more than one target. The proposed method makes it possible to obtain thin films of uniform thickness on substrates with sizes limited only by the deposition chamber size. Some of the methods are experimentally verified by depositing CuO thin films and the deviation of the film thickness from the average value does not exceed ±3%. Given the advantage of laser deposition, the offered methods should find practical use, in particular, in micro-electronics, optical industry, development of superconducting coated conductors, deposition of thin films of functional materials and other modern technologies.

Large area Pulsed Laser Deposition of Aurivillius-Type Layered Perovskite Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
A. Pignolet ◽  
C. Curran ◽  
S. Welke ◽  
S. Senz ◽  
M. Alexe ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Electrical Measurements ◽  
Large Area ◽  
A New Technique ◽  
Composition Structure ◽  
Near Future

AbstractThin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and SrBi2Ta2O9 have been epitaxially deposited by pulsed laser deposition (PLD) on SrTiO3 single crystal substrates. Bi4 Ti3O12 has been deposited as well on a CeO2JYSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi4Ti3O12 has also been deposited on a whole (100)-oriented 3”- Si wafer. The obtained films have a uniform thickness over a diameter greater than 50 mm, corresponding to an area of about 20 cm2. It is likely that homogeneous deposition on entire wafers of 3-inch in diameter will be accomplished in the near future. The composition, structure, and electrical properties of the films are presented.

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