Microwave characterization of coplanar waveguide transmission lines fabricated by ion implantation patterning of YBa/sub 2/Cu/sub 3/O/sub 7-δ/

1997 ◽  
Vol 7 (2) ◽  
pp. 2780-2783 ◽  
Author(s):  
J.C. Booth ◽  
J.A. Beall ◽  
D.C. DeGroot ◽  
D.A. Rudman ◽  
R.H. Ono ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Transmission Lines ◽  
Coplanar Waveguide ◽  
Microwave Characterization ◽  
Waveguide Transmission

Microwave Characterization Techniques for High K Thin Films

2009 ◽  
Vol 421-422 ◽  
pp. 73-76
Author(s):  
K. Sudheendran ◽  
K.C. James Raju
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Transmission Lines ◽  
Coplanar Waveguide ◽  
Measurement Techniques ◽  
Microwave Dielectric Properties ◽  
Microwave Frequency ◽  
Characterization Techniques ◽  
Microwave Characterization

Characterization of the dielectric properties of bulk materials in the microwave frequency range is well developed while that of thin films is a challenge. New microwave characterization techniques are needed for thin films taking in to account the fact that they are always deposited on a dielectric or conducting substrate and the thickness of the film is too small compared to the wavelength involved. In this paper we are demonstrating various techniques that can be used for the microwave characterization of thin films. The microwave dielectric properties of the bismuth zinc niobate (BZN) thin films were characterized at different frequencies using a few techniques by involving coplanar waveguide (CPW) transmission lines circular patch capacitors and split post dielectric resonators. The first two are broadband measurement techniques while the third one is a spot frequency technique.

Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide

1999 ◽  
Vol 35 (22) ◽  
pp. 1957 ◽  
Author(s):  
G. Ternent ◽  
S. Ferguson ◽  
Z. Borsosfoldi ◽  
K. Elgaid ◽  
T. Lohdi ◽  
...  
Keyword(s):  
Transmission Lines ◽  
Coplanar Waveguide ◽  
High Q ◽  
Grade Silicon ◽  
Waveguide Transmission

scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transmission Lines ◽  
High Power ◽  
High Speed ◽  
Signal Transmission ◽  
Mesa Structure ◽  
Microwave Characterization ◽  
Absorbing Layer ◽  
Analog Transmission

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

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