Open resonator mode patterns for characterization of anisotropic dielectric substrates for HTS thin films

1997 ◽  
Vol 7 (2) ◽  
pp. 1861-1864 ◽  
Author(s):  
T.E. Harrington ◽  
J. Wosik ◽  
S.A. Long
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.


2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  

2018 ◽  
Vol 14 (2) ◽  
pp. 221-234
Author(s):  
Ahmed Namah Mohamed ◽  
◽  
Jafer Fahdel Odah ◽  
Haider Tawfiq Naeem

2009 ◽  
Vol 25 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Guo-Qiang TAN ◽  
Hai-Yang BO ◽  
Hong-Yan MIAO ◽  
Ao XIA ◽  
Zhong-Liang HE

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