High-power high-efficiency X-band AlGaAs/GaAs heterojunction bipolar transistors with undercut collectors

1997 ◽  
Vol 7 (9) ◽  
pp. 288-290 ◽  
Author(s):  
Hin-Fai Chau ◽  
G. Wilcox ◽  
Wenliang Chen ◽  
M. Tutt ◽  
T. Henderson
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
High Efficiency ◽  
Bipolar Transistors ◽  
X Band

High power density pulsed X-band heterojunction bipolar transistors

1991 ◽  
Vol 27 (2) ◽  
pp. 148 ◽  
Author(s):  
M.G. Adlerstein ◽  
M.P. Zaitlin ◽  
G. Flynn ◽  
W. Hoke ◽  
J. Huang ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Power Density ◽  
X Band

X-Band High-Efficiency High-Power GaN Power Amplifier Based on Edge-Triggered Gate Modulation

2020 ◽  
Vol 30 (9) ◽  
pp. 884-887
Author(s):  
Wen-Rao Fang ◽  
Wen-Hua Huang ◽  
Wen-Hui Huang ◽  
Jia-Wei Li ◽  
Chao Fu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
X Band

Design and Analysis of Micromachined Thermosyphon for Cooling of High-Power InP HBT Circuits

2003 ◽  
Author(s):  
H. Khalkhali ◽  
S. Mohammadi ◽  
L. P. B. Katehi ◽  
K. Kurabayashi
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Working Fluid ◽  
Thermal Reliability ◽  
Drive Power ◽  
On Chip ◽  
Micrometer Scale

Integrated InP heterojunction bipolar transistors (HBTs) are used as a high-speed switch in high-power radio frequency (RF) circuits for microwave wireless communications. The power dissipation of each of these devices often reaches as high as 1 W, raising concerns for their thermal reliability. The relatively poor thermal conductivity of InP prohibits effective spreading of heat within the device substrate. To address this problem, this work proposes a novel microfluidic device called the “micro thermosyphon” for cooling the InP-based microwave circuits. This paper describes the concept of the micro thermosyphon and presents its design and analysis, accounting for the large surface tension effect of the working fluid at the micrometer scale. Our simulation suggests that the proposed device could remove a heat flux density as large as 25 W/cm2 from a high-power InP HBT circuit while maintaining the circuit temperature lower than 100 °C. The micro thermosyphon is a fully passive cooling device suited for achieving effective on-chip cooling without requiring any drive power. Experimental work is currently being under way to validate the device performance.

High efficiency high power X-band GaAs FETs

1981 ◽  
Author(s):  
D. Zemack ◽  
L. Rosenheck ◽  
J. Thompson ◽  
I. Drukier
Keyword(s):  
High Power ◽  
High Efficiency ◽  
X Band

High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer

2003 ◽  
Vol 798 ◽  
Author(s):  
Toshiki Makimoto ◽  
Yoshiharu Yamauchi ◽  
Kazuhide Kumakura
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Collector Current ◽  
Power Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Double Heterojunction ◽  
Extrinsic Base

ABSTRACTWe have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

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