GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers

2000 ◽  
Vol 47 (12) ◽  
pp. 2277-2283 ◽  
Author(s):  
N. Pan ◽  
S.J. Whitney ◽  
R.E. Welser ◽  
C.R. Lutz ◽  
P.M. Asbeck ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
High Efficiency ◽  
Layer Structure ◽  
Bipolar Transistors ◽  
Fabrication Process

High-power high-efficiency X-band AlGaAs/GaAs heterojunction bipolar transistors with undercut collectors

1997 ◽  
Vol 7 (9) ◽  
pp. 288-290 ◽  
Author(s):  
Hin-Fai Chau ◽  
G. Wilcox ◽  
Wenliang Chen ◽  
M. Tutt ◽  
T. Henderson
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
High Efficiency ◽  
Bipolar Transistors ◽  
X Band

Design and Analysis of Micromachined Thermosyphon for Cooling of High-Power InP HBT Circuits

2003 ◽  
Author(s):  
H. Khalkhali ◽  
S. Mohammadi ◽  
L. P. B. Katehi ◽  
K. Kurabayashi
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Working Fluid ◽  
Thermal Reliability ◽  
Drive Power ◽  
On Chip ◽  
Micrometer Scale

Integrated InP heterojunction bipolar transistors (HBTs) are used as a high-speed switch in high-power radio frequency (RF) circuits for microwave wireless communications. The power dissipation of each of these devices often reaches as high as 1 W, raising concerns for their thermal reliability. The relatively poor thermal conductivity of InP prohibits effective spreading of heat within the device substrate. To address this problem, this work proposes a novel microfluidic device called the “micro thermosyphon” for cooling the InP-based microwave circuits. This paper describes the concept of the micro thermosyphon and presents its design and analysis, accounting for the large surface tension effect of the working fluid at the micrometer scale. Our simulation suggests that the proposed device could remove a heat flux density as large as 25 W/cm2 from a high-power InP HBT circuit while maintaining the circuit temperature lower than 100 °C. The micro thermosyphon is a fully passive cooling device suited for achieving effective on-chip cooling without requiring any drive power. Experimental work is currently being under way to validate the device performance.

High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer

2003 ◽  
Vol 798 ◽  
Author(s):  
Toshiki Makimoto ◽  
Yoshiharu Yamauchi ◽  
Kazuhide Kumakura
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Collector Current ◽  
Power Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Double Heterojunction ◽  
Extrinsic Base

ABSTRACTWe have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

High power density pulsed X-band heterojunction bipolar transistors

1991 ◽  
Vol 27 (2) ◽  
pp. 148 ◽  
Author(s):  
M.G. Adlerstein ◽  
M.P. Zaitlin ◽  
G. Flynn ◽  
W. Hoke ◽  
J. Huang ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Power Density ◽  
X Band

Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors

2006 ◽  
Vol 89 (23) ◽  
pp. 233521 ◽  
Author(s):  
Paddy K. L. Chan ◽  
Kevin P. Pipe ◽  
Guoxuan Qin ◽  
Zhenqiang Ma
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors
Sign in / Sign up

Export Citation Format

Share Document