On the relationship between Schottky barrier capacitance and mixer performance at cryogenic temperatures

1996 ◽  
Vol 6 (8) ◽  
pp. 286 ◽  
Author(s):  
R. R. Romanofsky
Keyword(s):  
Schottky Barrier ◽  
Cryogenic Temperatures ◽  
Barrier Capacitance ◽  
The Relationship

Double Schottky‐Barrier Capacitance on Trigonal Selenium

1968 ◽  
Vol 39 (11) ◽  
pp. 5308-5309 ◽  
Author(s):  
A. I. Lakatos ◽  
G. G. Roberts
Keyword(s):  
Schottky Barrier ◽  
Barrier Capacitance

Annealing Effects of Schottky Contacts on the Characteristics of 4H-SiC Schottky Barrier Diodes

1999 ◽  
Vol 572 ◽  
Author(s):  
S. C. Kang ◽  
B. H. Kum ◽  
S. J. Do ◽  
J. H. Je ◽  
M. W. SHIN
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
X Ray ◽  
Annealing Temperatures ◽  
X Ray Scattering ◽  
Different Temperatures ◽  
Annealing Effects ◽  
Evolution Of Microstructure ◽  
The Relationship ◽  
Ray Scattering

ABSTRACTThis paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes ( SBDs ). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850 °C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650 °C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts

1993 ◽  
Vol 74 (3) ◽  
pp. 1885-1889 ◽  
Author(s):  
R. van de Walle ◽  
R. L. Van Meirhaeghe ◽  
W. H. Laflère ◽  
F. Cardon
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interfacial Defects ◽  
The Relationship
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