Integration of microdiffractive lens with continuous relief with vertical-cavity surface-emitting lasers using focused ion beam direct milling

2001 ◽  
Vol 13 (5) ◽  
pp. 424-426 ◽  
Author(s):  
Yongqi Fu
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

An Atlas of ESD Failure Signatures in Vertical Cavity Surface Emitting Lasers

2005 ◽  
Author(s):  
D.T. Mathes ◽  
J. Guenter ◽  
B. Hawkins ◽  
B. Hawthorne ◽  
C. Johnson
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Cavity Surface ◽  
Material Degradation ◽  
Root Cause ◽  
Transmission Electron ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Abstract AOC herein describes a collection of material degradation features observed in Vertical Cavity Surface Emitting Lasers (VCSELs) that have been intentionally degraded with a range of electrostatic discharge (ESD) stress conditions. Failure analysis techniques employed include emission microscopy, Focused Ion Beam (FIB) microscopy and Transmission Electron Microscopy (TEM). The results have enabled higher confidence in root-cause determination for failed VCSEL devices.

Passivation of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers by Amorphous GaAs Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Hyo-Hoon Park ◽  
Byueng-Su Yoo ◽  
Min Soo Park ◽  
Jaejin Lee ◽  
Hae Gwon Lee ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Defect Density ◽  
Ion Beam ◽  
Threshold Current ◽  
Gaas Layer ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractWe report for the first time a successful application of semi-insulating amorphous GaAs layer for surface passivation of index-guided vertical-cavity surface-emitting lasers. The amorphous GaAs layers on ion-beam-etched active region and mirror layers provide a significant improvement, more than 20%, in the threshold current density and differential quantum efficiency. The improvement of these performances is attributed to low defect density at the surface of active layers induced by amorphous GaAs.

Effect of Geometric Factors on Polarization Properties of Vertical-Cavity Surface-Emitting Lasers With Tilted Pillar Structures

1997 ◽  
Vol 484 ◽  
Author(s):  
Min Soo Park ◽  
Byung Tae Ahn ◽  
Hye Yong Chu ◽  
Byueng-Su Yoo ◽  
Hyo-Hoon Park
Keyword(s):  
Ion Beam ◽  
Cavity Surface ◽  
Ion Beam Etching ◽  
Geometric Factors ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Asymmetric Shape ◽  
Polarization Characteristics ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractWe have studied the effect of geometric factors on the polarization properties of verticalcavity surface-emitting lasers with tilted pillar structures. Laser pillars with circular, square, diamond, and rectangular shapes were formed using reactive ion beam etching, by tilting the substrate with an angle of 15° ∼ 30° toward the [110] or [110] direction. We measured the polarization characteristics for the devices of 10 ∼ 20 atm size. We observed that an effective geometric factor on the polarization selectivity in tilted pillar structures is an asymmetric shape of vertical-cavity rather than an anisotropic shape of device area in planar direction.

Recent developments in the area of vertical cavity surface emitting lasers

1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Recent Developments ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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