An 850-nm InAlGaAs strained quantum-well vertical-cavity surface-emitting laser grown on GaAs (311)B substrate with high-polarization stability

2000 ◽  
Vol 12 (8) ◽  
pp. 942-944 ◽  
Author(s):  
O. Tadanaga ◽  
K. Tateno ◽  
H. Uenohara ◽  
T. Kagawa ◽  
C. Amano
1992 ◽  
Vol 60 (15) ◽  
pp. 1830-1832 ◽  
Author(s):  
R. P. Schneider ◽  
R. P. Bryan ◽  
J. A. Lott ◽  
G. R. Olbright

2012 ◽  
Vol 20 (10) ◽  
pp. 2147-2153 ◽  
Author(s):  
刘迪 LIU Di ◽  
宁永强 NING Yong-qiang ◽  
张金龙 ZHANG Jin-long ◽  
张星 ZHANG Xing ◽  
王立军 WANG Li-jun

1990 ◽  
Vol 2 (7) ◽  
pp. 456-458 ◽  
Author(s):  
Y.H. Wang ◽  
K. Tai ◽  
J.D. Wynn ◽  
M. Hong ◽  
R.J. Fischer ◽  
...  

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