Single-mode tunable quantum cascade lasers in the spectral range of the CO2 laser at /spl lambda/=9.5-10.5 μm

2000 ◽  
Vol 12 (5) ◽  
pp. 474-476 ◽  
Author(s):  
R. Kohler ◽  
C. Gmachl ◽  
F. Capasso ◽  
A. Tredicucci ◽  
D.L. Sivco ◽  
...  
Sensors ◽  
2016 ◽  
Vol 16 (4) ◽  
pp. 533 ◽  
Author(s):  
Pietro Patimisco ◽  
Angelo Sampaolo ◽  
Laura Mihai ◽  
Marilena Giglio ◽  
Jason Kriesel ◽  
...  

2006 ◽  
Author(s):  
Stéphane Blaser ◽  
Lubos Hvozdara ◽  
Yargo Bonetti ◽  
Antoine Muller ◽  
Andreas Bächle ◽  
...  

2004 ◽  
Vol 829 ◽  
Author(s):  
S. Golka ◽  
M. Austerer ◽  
C. Pflügl ◽  
W. Schrenk ◽  
G. Strasser

ABSTRACTGratings in GaAs/AlGaAs mid-infrared quantum cascade lasers (QCLs) are fabricated with a structure depth of more than 10 μm. A N2/SiCl4 inductively coupled plasma reactive ion etching (ICP-RIE) process was employed to achieve extremely smooth sidewalls and selectivities to the SiNX etch mask of up to 70:1. EDX spectra measured on as-etched samples show that sidewall etch inhibition is caused by a thin Si containing layer on the sidewalls that is formed simultaneously with ICP etching of GaAs at the bottom of the trenches. To demonstrate device application gratings with a pitch of 1.72 μm are applied to long rib waveguide -based QCLs emitting at λ = 10.7 μm. When etched laterally together with the rib the grating gives rise to stable single mode emission up to 295K from these QCLs. The respective grating coupling coefficient is determined to be κ = 29 cm-1.


2016 ◽  
Vol 24 (13) ◽  
pp. 14589 ◽  
Author(s):  
Ryan M. Briggs ◽  
Clifford Frez ◽  
Mathieu Fradet ◽  
Siamak Forouhar ◽  
Romain Blanchard ◽  
...  

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