Single-mode narrow beam divergence surface-emitting concentric-circular-grating terahertz quantum cascade lasers

2012 ◽  
Author(s):  
Guozhen Liang ◽  
Houkun Liang ◽  
Ying Zhang ◽  
Suraj P. Khanna ◽  
Lianhe Li ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Single Mode ◽  
Beam Divergence ◽  
Narrow Beam ◽  
Quantum Cascade ◽  
Circular Grating ◽  
Cascade Lasers

scholarly journals Low divergence single-mode surface-emitting concentric-circular-grating terahertz quantum cascade lasers

2013 ◽  
Vol 21 (26) ◽  
pp. 31872 ◽  
Author(s):  
Guozhen Liang ◽  
Houkun Liang ◽  
Ying Zhang ◽  
Lianhe Li ◽  
A. Giles Davies ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Single Mode ◽  
Quantum Cascade ◽  
Circular Grating ◽  
Cascade Lasers

scholarly journals Single-mode surface-emitting concentric-circular-grating terahertz quantum cascade lasers

2013 ◽  
Vol 102 (3) ◽  
pp. 031119 ◽  
Author(s):  
Guozhen Liang ◽  
Houkun Liang ◽  
Ying Zhang ◽  
Suraj P. Khanna ◽  
Lianhe Li ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Single Mode ◽  
Quantum Cascade ◽  
Circular Grating ◽  
Cascade Lasers

Room-temperature continuous-wave single-mode quantum cascade lasers

2006 ◽  
Author(s):  
Stéphane Blaser ◽  
Lubos Hvozdara ◽  
Yargo Bonetti ◽  
Antoine Muller ◽  
Andreas Bächle ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Cascade Lasers ◽  
Single Mode ◽  
Quantum Cascade ◽  
Cascade Lasers

Processing of deeply etched GaAs/AlGaAs quantum cascade lasers with grating structures

2004 ◽  
Vol 829 ◽  
Author(s):  
S. Golka ◽  
M. Austerer ◽  
C. Pflügl ◽  
W. Schrenk ◽  
G. Strasser
Keyword(s):  
Coupling Coefficient ◽  
Inductively Coupled Plasma ◽  
Quantum Cascade Lasers ◽  
Single Mode ◽  
Mid Infrared ◽  
Quantum Cascade ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Grating Coupling ◽  
Cascade Lasers

ABSTRACTGratings in GaAs/AlGaAs mid-infrared quantum cascade lasers (QCLs) are fabricated with a structure depth of more than 10 μm. A N2/SiCl4 inductively coupled plasma reactive ion etching (ICP-RIE) process was employed to achieve extremely smooth sidewalls and selectivities to the SiNX etch mask of up to 70:1. EDX spectra measured on as-etched samples show that sidewall etch inhibition is caused by a thin Si containing layer on the sidewalls that is formed simultaneously with ICP etching of GaAs at the bottom of the trenches. To demonstrate device application gratings with a pitch of 1.72 μm are applied to long rib waveguide -based QCLs emitting at λ = 10.7 μm. When etched laterally together with the rib the grating gives rise to stable single mode emission up to 295K from these QCLs. The respective grating coupling coefficient is determined to be κ = 29 cm-1.

scholarly journals Low-dissipation 74-µm single-mode quantum cascade lasers without epitaxial regrowth

2016 ◽  
Vol 24 (13) ◽  
pp. 14589 ◽  
Author(s):  
Ryan M. Briggs ◽  
Clifford Frez ◽  
Mathieu Fradet ◽  
Siamak Forouhar ◽  
Romain Blanchard ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Single Mode ◽  
Quantum Cascade ◽  
Epitaxial Regrowth ◽  
Low Dissipation ◽  
Cascade Lasers

Single-mode, tunable distributed-feedback and multiple-wavelength quantum cascade lasers

2002 ◽  
Vol 38 (6) ◽  
pp. 569-581 ◽  
Author(s):  
C. Gmachl ◽  
A. Straub ◽  
R. Colombelli ◽  
F. Capasso ◽  
D.L. Sivco ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Single Mode ◽  
Distributed Feedback ◽  
Quantum Cascade ◽  
Multiple Wavelength ◽  
Cascade Lasers
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