Selective lasing of InGaAs quantum-wire array on a V-grooved GaAs substrate by distributed optical feedback

1999 ◽  
Vol 11 (12) ◽  
pp. 1530-1532 ◽  
Author(s):  
T. Toda ◽  
F. Reinhardt ◽  
E. Martinet ◽  
E. Kapon ◽  
Y. Nakano
Keyword(s):  
Quantum Wire ◽  
Gaas Substrate ◽  
Optical Feedback ◽  
Wire Array

Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate

1991 ◽  
Vol 240 ◽  
Author(s):  
H. Kanbe ◽  
A. Chavez-Pirson ◽  
M. Kumagai ◽  
H. Saito ◽  
T. Fukui
Keyword(s):  
Quantum Wire ◽  
Optical Anisotropy ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Wire Array ◽  
Chemical Vapor ◽  
Cross Sectional ◽  
Polarization Spectroscopy ◽  
Cross Sectional Size

ABSTRACTThe optical properties of a quantum wire array which was successfully realized in a 4-nm-thick (GaAs)1/2 (AlAs)1/2 fractional-layer superlattice (FLS) are described. The FLS sample was grown by metalorganic chemical vapor deposition on a (001) vicinal GaAs substrate tilted 2 ° towards [110]. The nominal cross sectional size of the GaAs wires is 4×4 nm. Optical anisotropy in absorption, refractive index and photoluminescence was clearly observed by polarization spectroscopy at room temperature as well as lower temperatures.

A short-period GaAs-AlGaAs quantum-wire array laser with a submicrometer current blocking layer

1997 ◽  
Vol 9 (1) ◽  
pp. 2-4 ◽  
Author(s):  
Tae-Geun Kim ◽  
Kyung-Hyun Park ◽  
Eun Kyu Kim ◽  
Suk-Ki Min ◽  
Jung-Ho Park
Keyword(s):  
Quantum Wire ◽  
Wire Array ◽  
Blocking Layer ◽  
Short Period ◽  
Current Blocking Layer ◽  
Current Blocking

Electronic structure of a surface quantum-wire array

2002 ◽  
Vol 514 (1-3) ◽  
pp. 100-107 ◽  
Author(s):  
K. Yoo ◽  
S.J. Tang ◽  
P.T. Sprunger ◽  
I. Benito ◽  
J. Ortega ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Wire ◽  
Wire Array

Dynamical Conductivity in Disordered Quantum Wire Array

2007 ◽  
Vol 76 (7) ◽  
pp. 074705 ◽  
Author(s):  
Hiroshi Tsukahara ◽  
Tsuneya Ando
Keyword(s):  
Quantum Wire ◽  
Wire Array ◽  
Dynamical Conductivity

Observation of Hexagonal AiGaAs Grown by OMCVD

1990 ◽  
Vol 209 ◽  
Author(s):  
D. M. Hwang ◽  
T. S. Ravi ◽  
R. Bhat ◽  
S. Simhony ◽  
C. Y. Chen ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Wire ◽  
Gaas Substrate ◽  
Hexagonal Phase ◽  
Stacking Faults ◽  
Hexagonal Structure ◽  
Cubic Phase ◽  
Lattice Images ◽  
Diffraction Patterns ◽  
Cladding Layers

ABSTRACTExtended regions of hexagonal zinc sulfide (wurtzite) structure are found to exist in AlGaAs grown by low-pressure OMCVD at 750°C. The specimen was prepared on a (001) GaAs substrate patterned with [110]-orientedV-grooves, intended for a quantum wire laser structure. A high density of planar faults was observed to originate in theAl0.66Ga0.34As cladding layers near the inner corners of the V-grooves and propagate towards the surface along the {111} planes. Many of these faults are stacking faults and microtwins. However, there also exhibit extended regions of hexagonal structure, revealed in electron diffraction patterns and high resolution lattice images. The hexagonal phase shares the same close-packed layers with the cubic phase, i.e., (0001)hexagonal // {111}cubic. The mechanism for the formation of hexagonal structure in this specimen is not yet fully understood.

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