Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers

1998 ◽  
Vol 10 (12) ◽  
pp. 1703-1705 ◽  
Author(s):  
T. Ishikawa ◽  
T. Higashi ◽  
T. Uchida ◽  
T. Yamamoto ◽  
T. Fujii ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Thickness Dependence ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Temperature Characteristics

Uncooled high-temperature (130/spl deg/C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s

1997 ◽  
Vol 9 (5) ◽  
pp. 575-577 ◽  
Author(s):  
K. Czotscher ◽  
E.C. Larkins ◽  
S. Weisser ◽  
W. Benz ◽  
J. Daleiden ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum

1.3 μm InAsP compressively strained multiple‐quantum‐well lasers for high‐temperature operation

1995 ◽  
Vol 77 (8) ◽  
pp. 4119-4121 ◽  
Author(s):  
H. Oohashi ◽  
T. Hirono ◽  
S. Seki ◽  
H. Sugiura ◽  
J. Nakano ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
High Temperature Operation

High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers

1999 ◽  
Vol 14 (12) ◽  
pp. 1069-1075 ◽  
Author(s):  
L V Asryan ◽  
N A Gun'ko ◽  
A S Polkovnikov ◽  
R A Suris ◽  
G G Zegrya ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
High Temperature Operation
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