Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture

1998 ◽  
Vol 10 (8) ◽  
pp. 1064-1066 ◽  
Author(s):  
T.-H. Oh ◽  
O.B. Shchekin ◽  
D.G. Deppe
2009 ◽  
Vol 105 (9) ◽  
pp. 093102 ◽  
Author(s):  
Tomasz Czyszanowski ◽  
Robert P. Sarzała ◽  
Maciej Dems ◽  
Włodzimierz Nakwaski ◽  
Hugo Thienpont ◽  
...  

Author(s):  
Nikolay Ledentsov Jr ◽  
Vitaly Shchukin ◽  
Joerg Kropp ◽  
Mikel Agustin ◽  
Nikolay N. Ledentsov

1996 ◽  
Vol 450 ◽  
Author(s):  
C. W. Lo ◽  
S. F. Yu

ABSTRACTVertical-cavity surface-emitting lasers (VCSELs) with suitable interdiffusion quantum wells profile by the use of selective impurity-induced disordering is proposed for high power single mode operation in large area devices. It is shown that the transverse optical confinement in the quantum well active region formed by the diffusion profile counteracts the influence of carrier spatial hole burning for VCSELs biased at high injection current Results indicate that a single mode operation can be maintained in VCSELs with the diameter of core region equal to 50μm.


2004 ◽  
Vol 85 (21) ◽  
pp. 4851-4853 ◽  
Author(s):  
R. Marcks von Würtemberg ◽  
P. Sundgren ◽  
J. Berggren ◽  
M. Hammar ◽  
M. Ghisoni ◽  
...  

2004 ◽  
Vol 19 (8) ◽  
pp. L86-L89 ◽  
Author(s):  
Fang-I Lai ◽  
Tao-Hung Hsueh ◽  
Ya-Hsien Chang ◽  
Hao-Chung Kuo ◽  
S C Wang ◽  
...  

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