Optimal photonic-crystal parameters assuring single-mode operation of 1300 nm AlInGaAs vertical-cavity surface-emitting laser

2009 ◽  
Vol 105 (9) ◽  
pp. 093102 ◽  
Author(s):  
Tomasz Czyszanowski ◽  
Robert P. Sarzała ◽  
Maciej Dems ◽  
Włodzimierz Nakwaski ◽  
Hugo Thienpont ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Single Mode ◽  
Cavity Surface ◽  
Single Mode Operation ◽  
Mode Operation ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Error-Free Transmission Over 1-km OM4 Multimode Fiber at 25 Gb/s Using a Single Mode Photonic Crystal Vertical-Cavity Surface-Emitting Laser

2013 ◽  
Vol 25 (18) ◽  
pp. 1823-1825 ◽  
Author(s):  
Meng Peun Tan ◽  
Stewart Thomas M. Fryslie ◽  
James A. Lott ◽  
Nikolay N. Ledentsov ◽  
Dieter Bimberg ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Single Mode ◽  
Cavity Surface ◽  
Multimode Fiber ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Oxide-confined leaky vertical-cavity surface-emitting lasers for single-mode operation

SPIE Newsroom ◽  
2016 ◽  
Author(s):  
Nikolay Ledentsov Jr ◽  
Vitaly Shchukin ◽  
Joerg Kropp ◽  
Mikel Agustin ◽  
Nikolay N. Ledentsov
Keyword(s):  
Single Mode ◽  
Cavity Surface ◽  
Single Mode Operation ◽  
Mode Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Single Mode Operation of Impurity-Induced Disordering Large Area Vertical Cavity Surface Emitting Lasers

1996 ◽  
Vol 450 ◽  
Author(s):  
C. W. Lo ◽  
S. F. Yu
Keyword(s):  
Single Mode ◽  
Hole Burning ◽  
Cavity Surface ◽  
Large Area ◽  
Single Mode Operation ◽  
Mode Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

ABSTRACTVertical-cavity surface-emitting lasers (VCSELs) with suitable interdiffusion quantum wells profile by the use of selective impurity-induced disordering is proposed for high power single mode operation in large area devices. It is shown that the transverse optical confinement in the quantum well active region formed by the diffusion profile counteracts the influence of carrier spatial hole burning for VCSELs biased at high injection current Results indicate that a single mode operation can be maintained in VCSELs with the diameter of core region equal to 50μm.

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