AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes for polymer fiber application

1998 ◽  
Vol 10 (6) ◽  
pp. 772-774 ◽  
Author(s):  
S.J. Chang ◽  
C.S. Chang
Keyword(s):  
Light Emitting Diodes ◽  
Polymer Fiber ◽  
Light Emitting ◽  
Multiquantum Well

Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes

2003 ◽  
Vol 94 (9) ◽  
pp. 6122-6128 ◽  
Author(s):  
G. Franssen ◽  
E. Litwin-Staszewska ◽  
R. Piotrzkowski ◽  
T. Suski ◽  
P. Perlin
Keyword(s):  
Electrical Properties ◽  
Light Emitting Diodes ◽  
Optical And Electrical Properties ◽  
Light Emitting ◽  
Multiquantum Well

AlGaInP multiquantum well light-emitting diodes

1997 ◽  
Vol 144 (6) ◽  
pp. 405-409 ◽  
Author(s):  
S.J. Chang ◽  
K.H. Huang ◽  
Y.K. Su ◽  
T.P. Chen ◽  
P.T. Chang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Multiquantum Well

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

2002 ◽  
Vol 8 (4) ◽  
pp. 744-748 ◽  
Author(s):  
S.J. Chang ◽  
C.H. Kuo ◽  
Y.K. Su ◽  
L.W. Wu ◽  
J.K. Sheu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Multiquantum Well

scholarly journals Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. J. Carrington ◽  
M. de la Mare ◽  
K. J. Cheetham ◽  
Q. Zhuang ◽  
A. Krier
Keyword(s):  
Light Emitting Diodes ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Limiting Factors ◽  
Type I ◽  
Dilute Nitride ◽  
Light Emitting ◽  
Thermally Activated ◽  
Bright Emission ◽  
Multiquantum Well

Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes

2019 ◽  
Vol 94 (10) ◽  
pp. 105808 ◽  
Author(s):  
Muhammad Usman ◽  
Urooj Mushtaq ◽  
Munaza Munsif ◽  
Abdur-Rehman Anwar ◽  
Muhammad Kamran
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Multiquantum Well

InGaN-GaN multiquantum-well blue and green light-emitting diodes

2002 ◽  
Vol 8 (2) ◽  
pp. 278-283 ◽  
Author(s):  
S.J. Chang ◽  
W.C. Lai ◽  
Y.K. Su ◽  
J.F. Chen ◽  
C.H. Liu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Multiquantum Well
Sign in / Sign up

Export Citation Format

Share Document