Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure

K. Magari; M. Okamoto; H. Yasaka; K. Sato; Y. Noguchi; O. Mikami

doi:10.1109/68.58047

Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure

IEEE Photonics Technology Letters ◽

10.1109/68.58047 ◽

1990 ◽

Vol 2 (8) ◽

pp. 556-558 ◽

Cited By ~ 54

Author(s):

K. Magari ◽

M. Okamoto ◽

H. Yasaka ◽

K. Sato ◽

Y. Noguchi ◽

...

Keyword(s):

Quantum Well ◽

Traveling Wave ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Wave Type ◽

Quantum Well Structure ◽

Polarization Insensitive

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Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

Applied Physics Letters ◽

10.1063/1.109344 ◽

1993 ◽

Vol 62 (2) ◽

pp. 121-122 ◽

Cited By ~ 54

Author(s):

M. Joma ◽

H. Horikawa ◽

C. Q. Xu ◽

K. Yamada ◽

Y. Katoh ◽

...

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Laser Amplifiers ◽

Quantum Well Structure ◽

Polarization Insensitive ◽

Semiconductor Laser Amplifiers

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Polarization‐insensitive field‐induced refractive index change using a lattice‐matched InGaAlAs/InAlAs multiple quantum well structure

Applied Physics Letters ◽

10.1063/1.116957 ◽

1996 ◽

Vol 69 (27) ◽

pp. 4239-4241 ◽

Cited By ~ 3

Author(s):

Naoto Yoshimoto ◽

Susumu Kondo ◽

Yoshio Noguchi ◽

Takayuki Yamanaka ◽

Koichi Wakita

Keyword(s):

Refractive Index ◽

Quantum Well ◽

Multiple Quantum Well ◽

Refractive Index Change ◽

Multiple Quantum ◽

Index Change ◽

Quantum Well Structure ◽

Polarization Insensitive ◽

Lattice Matched

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Polarization-insensitive multiple-quantum-well traveling-wave electroabsorption modulators with 18 GHz bandwidth and 1.2 V driving voltage at 1.55 μm

International Topical Meeting on Microwave Photonics. Technical Digest (including High Speed Photonics Components Workshop) (Cat. No.98EX181) ◽

10.1109/mwp.1998.745484 ◽

2002 ◽

Author(s):

S.Z. Zhang ◽

Yi-Jen Chiu ◽

P. Abraham ◽

J.E. Bowers

Keyword(s):

Quantum Well ◽

Traveling Wave ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Driving Voltage ◽

Electroabsorption Modulators ◽

Polarization Insensitive

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Influence of Rashba spin-orbit interaction on the transmission and the dwell time of the electron tunneling through a multiple quantum well structure

Physica B Condensed Matter ◽

10.1016/j.physb.2013.08.025 ◽

2013 ◽

Vol 430 ◽

pp. 14-19 ◽

Cited By ~ 1

Author(s):

D.M. Baltateanu

Keyword(s):

Quantum Well ◽

Dwell Time ◽

Electron Tunneling ◽

Multiple Quantum Well ◽

Orbit Interaction ◽

Multiple Quantum ◽

Spin Orbit ◽

Spin Orbit Interaction ◽

Quantum Well Structure ◽

Rashba Spin

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Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure

Journal of Electronic Materials ◽

10.1007/s11664-000-0136-y ◽

2000 ◽

Vol 29 (11) ◽

pp. 1346-1350 ◽

Cited By ~ 4

Author(s):

L. Malikova ◽

Fred H. Pollak ◽

Oleg Gorea ◽

Alexander Korotcov

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Spectroscopy Study ◽

Modulation Spectroscopy ◽

Strained Layer ◽

Quantum Well Structure

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Low‐temperature AlGaAs/GaAs multiple quantum well structure and its application to photorefractive devices

Applied Physics Letters ◽

10.1063/1.116541 ◽

1996 ◽

Vol 68 (6) ◽

pp. 812-814 ◽

Cited By ~ 7

Author(s):

W. Feng ◽

Y. Yu ◽

H. Chen ◽

Q. Huang ◽

J. M. Zhou

Keyword(s):

Low Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structure

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Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure

Microelectronics Journal ◽

10.1016/0026-2692(95)00057-7 ◽

1996 ◽

Vol 27 (1) ◽

pp. 87-92

Author(s):

P.M. Nikolić ◽

Z. Ristovski ◽

S. Đurić ◽

V. Blagojević ◽

M.D. Dramićanin ◽

...

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Far Infrared ◽

Multiple Quantum ◽

Infrared Reflectivity ◽

Quantum Well Structure

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Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers

Applied Physics Letters ◽

10.1063/1.4811735 ◽

2013 ◽

Vol 102 (24) ◽

pp. 241108 ◽

Cited By ~ 9

Author(s):

Zhiyuan Zheng ◽

Zimin Chen ◽

Yingda Chen ◽

Hualong Wu ◽

Shanjin Huang ◽

...

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Efficiency Droop ◽

Multiple Quantum ◽

Carrier Injection ◽

Light Emitting ◽

Quantum Well Structure

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Spin-Flip Raman Studies of a ZnSe / Zn1-xMnxSe Multiple Quantum Well Structure

Materials Science Forum ◽

10.4028/www.scientific.net/msf.182-184.455 ◽

1995 ◽

Vol 182-184 ◽

pp. 455-458 ◽

Cited By ~ 1

Author(s):

P.J. Boyce ◽

D. Wolverson ◽

J.J. Davies ◽

W. Heimbrodt

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structure ◽

Spin Flip

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Effect of Barrier Thickness and Barrier Doping on the Properties of InGaN/GaN Multiple-Quantum-Well Structure Light Emitting Diode

physica status solidi (c) ◽

10.1002/pssc.200390039 ◽

2003 ◽

Vol 0 (1) ◽

pp. 263-266 ◽

Cited By ~ 8

Author(s):

Tzong-Liang Tsai ◽

Chih-Sung Chang ◽

Tzer-Peng Chen ◽

Kuo-Hsin Huang

Keyword(s):

Quantum Well ◽

Light Emitting Diode ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Barrier Thickness ◽

Light Emitting ◽

Quantum Well Structure ◽

Structure Light

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