Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

1993 ◽  
Vol 62 (2) ◽  
pp. 121-122 ◽  
Author(s):  
M. Joma ◽  
H. Horikawa ◽  
C. Q. Xu ◽  
K. Yamada ◽  
Y. Katoh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Laser Amplifiers ◽  
Quantum Well Structure ◽  
Polarization Insensitive ◽  
Semiconductor Laser Amplifiers

Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure

1990 ◽  
Vol 2 (8) ◽  
pp. 556-558 ◽  
Author(s):  
K. Magari ◽  
M. Okamoto ◽  
H. Yasaka ◽  
K. Sato ◽  
Y. Noguchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Traveling Wave ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Wave Type ◽  
Quantum Well Structure ◽  
Polarization Insensitive

Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm window

1993 ◽  
Vol 62 (8) ◽  
pp. 826-828 ◽  
Author(s):  
L. F. Tiemeijer ◽  
P. J. A. Thijs ◽  
T. van Dongen ◽  
R. W. M. Slootweg ◽  
J. M. M. van der Heijden ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Laser Amplifiers ◽  
Quantum Well Laser ◽  
Polarization Insensitive ◽  
Multiple Quantum Well Laser

Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure

1996 ◽  
Vol 27 (1) ◽  
pp. 87-92
Author(s):  
P.M. Nikolić ◽  
Z. Ristovski ◽  
S. Đurić ◽  
V. Blagojević ◽  
M.D. Dramićanin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Far Infrared ◽  
Multiple Quantum ◽  
Infrared Reflectivity ◽  
Quantum Well Structure

108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorber

1990 ◽  
Vol 56 (4) ◽  
pp. 310-311 ◽  
Author(s):  
Steve Sanders ◽  
Lars Eng ◽  
Joel Paslaski ◽  
Amnon Yariv
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Multiple Quantum Well ◽  
Mode Locking ◽  
Multiple Quantum ◽  
Passive Mode
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