24-GHz modulation bandwidth and passive alignment of flip-chip mounted DFB laser diodes

1997 ◽  
Vol 9 (3) ◽  
pp. 306-308 ◽  
Author(s):  
S. Lindgren ◽  
H. Ahlfeldt ◽  
L. Backlin ◽  
L. Forssen ◽  
C. Vieider ◽  
...  
Keyword(s):  
Flip Chip ◽  
Laser Diodes ◽  
Modulation Bandwidth ◽  
Dfb Laser ◽  
Passive Alignment ◽  
24 Ghz

120<tex>$^circhboxC$</tex>10-Gb/s Uncooled Direct Modulated 1.3-<tex>$muhboxm$</tex>AlGaInAs MQW DFB Laser Diodes

2004 ◽  
Vol 16 (11) ◽  
pp. 2415-2417 ◽  
Author(s):  
K. Takagi ◽  
S. Shirai ◽  
Y. Tatsuoka ◽  
C. Watatani ◽  
T. Ota ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Dfb Laser

Study of distortions in CATV DFB laser diodes

1996 ◽  
Author(s):  
Jean-Christophe Froidure ◽  
Christophe Lebrun ◽  
Patrice Megret ◽  
V. Moeyaert ◽  
P. Goerg ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Dfb Laser

scholarly journals Dual-mode DFB laser diodes with apodized surface gratings

2018 ◽  
Vol 26 (13) ◽  
pp. 16303 ◽  
Author(s):  
Topi Uusitalo ◽  
Heikki Virtanen ◽  
Jukka Viheriälä ◽  
Mihail Dumitrescu
Keyword(s):  
Laser Diodes ◽  
Dual Mode ◽  
Dfb Laser

H2S and CO2 gas sensing using DFB laser diodes emitting at 1.57 μm

1995 ◽  
Vol 29 (1-3) ◽  
pp. 101-107 ◽  
Author(s):  
V. Weldon ◽  
J. O'Gorman ◽  
P. Phelan ◽  
J. Hegarty ◽  
T. Tanbun-Ek
Keyword(s):  
Gas Sensing ◽  
Laser Diodes ◽  
Co2 Gas ◽  
Dfb Laser

1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Transport ◽  
Stop Band ◽  
Longitudinal Distribution ◽  
Modulation Bandwidth ◽  
Carrier Injection ◽  
Strained Layer ◽  
High Modulation ◽  
Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

Reliable and damage-free dry grating etching for the InGaAsP DFB laser diodes

2003 ◽  
Author(s):  
Hyeon Soo Kim ◽  
Eun-Hwa Lee ◽  
Do Young Rhee ◽  
Young Churl Bang ◽  
Joon Sang Yu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Dfb Laser

scholarly journals Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 767 ◽  
Author(s):  
Hong Wang ◽  
Ming Zhong ◽  
Lijun Tan ◽  
Wei Shi ◽  
Quanbin Zhou
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystals ◽  
Flip Chip ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Experimental Result ◽  
Modulation Bandwidth ◽  
Light Emitting ◽  
Current Densities

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.

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