High-quality extended cavity ridge lasers fabricated by impurity-free vacancy diffusion with a novel masking technique

1997 ◽  
Vol 9 (3) ◽  
pp. 282-284 ◽  
Author(s):  
P. Cusumano ◽  
J.H. Marsh ◽  
M.J. Rose ◽  
J.S. Roberts
Keyword(s):  
Vacancy Diffusion ◽  
High Quality ◽  
Extended Cavity ◽  
Ridge Lasers ◽  
Free Vacancy

Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion

1994 ◽  
Vol 30 (2) ◽  
pp. 145-146 ◽  
Author(s):  
I. Gontijo ◽  
J.S. Roberts ◽  
R.M. De La Rue ◽  
J.H. Marsh ◽  
T. Krauss
Keyword(s):  
Vacancy Diffusion ◽  
Low Loss ◽  
Extended Cavity ◽  
Free Vacancy

Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing

2015 ◽  
Vol 644 ◽  
pp. 398-403 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Ruijuan Sun ◽  
Yupeng Duan ◽  
Nan Lin ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Red Shift ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy

Impurity Free Vacancy Disordering Using Phosphorus Doped SiO2 and Pure SiO2 Caps

1996 ◽  
Vol 450 ◽  
Author(s):  
P. Cusumano ◽  
A. Saher Helmy ◽  
B. S. Ooi ◽  
R. M. De La Rue ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonance Method ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Fabry Perot ◽  
Extended Cavity ◽  
Low Threshold ◽  
Ridge Lasers ◽  
Phosphorus Doped ◽  
Pure Sio2

ABSTRACTA spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm−1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Device Integration ◽  
Free Vacancy

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

Intermixing Characteristics of Strained-InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion

1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1303-L1305 ◽  
Author(s):  
Jung Woo Park ◽  
Hyun Soo Kim ◽  
Jung Soo Kim ◽  
Dae Kon Oh ◽  
Kwang Ryong Oh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Vacancy Diffusion ◽  
Quantum Well Structure ◽  
Free Vacancy

Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film

2018 ◽  
Vol 47 (3) ◽  
pp. 314003
Author(s):  
王鑫 WANG Xin ◽  
赵懿昊 ZHAO Yi-hao ◽  
朱凌妮 ZHU Ling-ni ◽  
侯继达 HOU Ji-da ◽  
马骁宇 MA Xiao-yu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Sio2 Film ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy
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