High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy
1996 ◽
Vol 8
(8)
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pp. 986-988
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1996 ◽
Vol 11
(12)
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pp. 1923-1926
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1996 ◽
Vol 35
(Part 2, No. 5B)
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pp. L634-L636
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1999 ◽
Vol 28
(8)
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pp. 980-985
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2001 ◽
Vol 29
(2)
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pp. 75-77
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